Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques wer...

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Autores principales: Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., Faigón, A.
Formato: JOUR
Materias:
Atomic layer deposited
C-V measurement
Capacitance-voltage techniques
Constant capacitance
Electrical characteristic
Electron trap density
Experimental evidence
Insulating layers
Main effect
Non-volatile memories
Non-volatile memory application
Physical model
Atomic layer deposition
Electron traps
MOS capacitors
Aluminum
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_00218979_v113_n7_p_SambucoSalomone2023-10-03T14:22:14Z Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications Sambuco Salomone, L. Lipovetzky, J. Carbonetto, S.H. García Inza, M.A. Redin, E.G. Campabadal, F. Faigón, A. Atomic layer deposited C-V measurement Capacitance-voltage techniques Constant capacitance Electrical characteristic Electron trap density Experimental evidence Insulating layers Main effect Non-volatile memories Non-volatile memory application Physical model Atomic layer deposition Electron traps MOS capacitors Aluminum Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm-3 and 1.6 × 1018 cm-3, respectively. © 2013 American Institute of Physics. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Atomic layer deposited
C-V measurement
Capacitance-voltage techniques
Constant capacitance
Electrical characteristic
Electron trap density
Experimental evidence
Insulating layers
Main effect
Non-volatile memories
Non-volatile memory application
Physical model
Atomic layer deposition
Electron traps
MOS capacitors
Aluminum
spellingShingle Atomic layer deposited
C-V measurement
Capacitance-voltage techniques
Constant capacitance
Electrical characteristic
Electron trap density
Experimental evidence
Insulating layers
Main effect
Non-volatile memories
Non-volatile memory application
Physical model
Atomic layer deposition
Electron traps
MOS capacitors
Aluminum
Sambuco Salomone, L.
Lipovetzky, J.
Carbonetto, S.H.
García Inza, M.A.
Redin, E.G.
Campabadal, F.
Faigón, A.
Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
topic_facet Atomic layer deposited
C-V measurement
Capacitance-voltage techniques
Constant capacitance
Electrical characteristic
Electron trap density
Experimental evidence
Insulating layers
Main effect
Non-volatile memories
Non-volatile memory application
Physical model
Atomic layer deposition
Electron traps
MOS capacitors
Aluminum
description Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm-3 and 1.6 × 1018 cm-3, respectively. © 2013 American Institute of Physics.
format JOUR
author Sambuco Salomone, L.
Lipovetzky, J.
Carbonetto, S.H.
García Inza, M.A.
Redin, E.G.
Campabadal, F.
Faigón, A.
author_facet Sambuco Salomone, L.
Lipovetzky, J.
Carbonetto, S.H.
García Inza, M.A.
Redin, E.G.
Campabadal, F.
Faigón, A.
author_sort Sambuco Salomone, L.
title Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
title_short Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
title_full Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
title_fullStr Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
title_full_unstemmed Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
title_sort experimental evidence and modeling of two types of electron traps in al2o3 for nonvolatile memory applications
url http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone
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