Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that t...
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| Autores principales: | Carbonetto, S.H., García Inza, M.A., Lipovetzky, J., Redin, E.G., Sambuco Salomone, L., Faigon, A. |
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| Formato: | JOUR |
| Materias: | |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto |
| Aporte de: |
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