Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry

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In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that t...

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Autores principales:	Carbonetto, S.H., García Inza, M.A., Lipovetzky, J., Redin, E.G., Sambuco Salomone, L., Faigon, A.
Formato:	JOUR
Materias:	Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00189499_v58_n6PART2_p3348_Carbonetto
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spelling	todo:paper_00189499_v58_n6PART2_p3348_Carbonetto2023-10-03T14:16:23Z Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry Carbonetto, S.H. García Inza, M.A. Lipovetzky, J. Redin, E.G. Sambuco Salomone, L. Faigon, A. Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. © 2011 IEEE. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices
spellingShingle	Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices Carbonetto, S.H. García Inza, M.A. Lipovetzky, J. Redin, E.G. Sambuco Salomone, L. Faigon, A. Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
topic_facet	Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices
description	In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. © 2011 IEEE.
format	JOUR
author	Carbonetto, S.H. García Inza, M.A. Lipovetzky, J. Redin, E.G. Sambuco Salomone, L. Faigon, A.
author_facet	Carbonetto, S.H. García Inza, M.A. Lipovetzky, J. Redin, E.G. Sambuco Salomone, L. Faigon, A.
author_sort	Carbonetto, S.H.
title	Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_short	Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_full	Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_fullStr	Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_full_unstemmed	Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_sort	zero temperature coefficient bias in mos devices. dependence on interface traps density, application to mos dosimetry
url	http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto
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_version_	1807315791658352640

Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry

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