Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

Mostrar todas las versiones(2)

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.

Guardado en:
Detalles Bibliográficos
Autores principales: Quinteros, C.P., Salomone, L.S., Redin, E., Rafí, J.M., Zabala, M., Faigón, A., Palumbo, F., Campabadal, F.
Formato: JOUR
Materias:
High-k gate dielectrics
MOS devices
radiation effects
Capacitance voltage
Comparative analysis
Gamma photons
High-k dielectric
Nanolaminate
Oxygen ions
Alumina
Hafnium oxides
Radiation effects
Capacitance
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

Ejemplares similares

Ejemplares similares