Tuning the resistive switching properties of TiO2-x films

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We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accesse...

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Detalles Bibliográficos
Autores principales: Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E., Stoliar, P.
Formato: JOUR
Materias:
Deposition
Oxygen
Switching
Switching systems
Temperature distribution
Conductive filaments
Device characteristics
Electrical characteristic
Fabrication parameters
Oxygen vacancy concentration
Resistive switching behaviors
Resistive switching devices
Temperature dependence
Oxygen vacancies
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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