Tuning the resistive switching properties of TiO2-x films

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accesse...

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Autores principales: Ghenzi, N., Rozenberg, M.J., Llopis, R., Levy, P., Hueso, L.E., Stoliar, P.
Formato: JOUR
Materias:
Deposition
Oxygen
Switching
Switching systems
Temperature distribution
Conductive filaments
Device characteristics
Electrical characteristic
Fabrication parameters
Oxygen vacancy concentration
Resistive switching behaviors
Resistive switching devices
Temperature dependence
Oxygen vacancies
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_00036951_v106_n12_p_Ghenzi
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spelling todo:paper_00036951_v106_n12_p_Ghenzi2023-10-03T13:56:33Z Tuning the resistive switching properties of TiO2-x films Ghenzi, N. Rozenberg, M.J. Llopis, R. Levy, P. Hueso, L.E. Stoliar, P. Deposition Oxygen Switching Switching systems Temperature distribution Conductive filaments Device characteristics Electrical characteristic Fabrication parameters Oxygen vacancy concentration Resistive switching behaviors Resistive switching devices Temperature dependence Oxygen vacancies We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state. © 2015 AIP Publishing LLC. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Deposition
Oxygen
Switching
Switching systems
Temperature distribution
Conductive filaments
Device characteristics
Electrical characteristic
Fabrication parameters
Oxygen vacancy concentration
Resistive switching behaviors
Resistive switching devices
Temperature dependence
Oxygen vacancies
spellingShingle Deposition
Oxygen
Switching
Switching systems
Temperature distribution
Conductive filaments
Device characteristics
Electrical characteristic
Fabrication parameters
Oxygen vacancy concentration
Resistive switching behaviors
Resistive switching devices
Temperature dependence
Oxygen vacancies
Ghenzi, N.
Rozenberg, M.J.
Llopis, R.
Levy, P.
Hueso, L.E.
Stoliar, P.
Tuning the resistive switching properties of TiO2-x films
topic_facet Deposition
Oxygen
Switching
Switching systems
Temperature distribution
Conductive filaments
Device characteristics
Electrical characteristic
Fabrication parameters
Oxygen vacancy concentration
Resistive switching behaviors
Resistive switching devices
Temperature dependence
Oxygen vacancies
description We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state. © 2015 AIP Publishing LLC.
format JOUR
author Ghenzi, N.
Rozenberg, M.J.
Llopis, R.
Levy, P.
Hueso, L.E.
Stoliar, P.
author_facet Ghenzi, N.
Rozenberg, M.J.
Llopis, R.
Levy, P.
Hueso, L.E.
Stoliar, P.
author_sort Ghenzi, N.
title Tuning the resistive switching properties of TiO2-x films
title_short Tuning the resistive switching properties of TiO2-x films
title_full Tuning the resistive switching properties of TiO2-x films
title_fullStr Tuning the resistive switching properties of TiO2-x films
title_full_unstemmed Tuning the resistive switching properties of TiO2-x films
title_sort tuning the resistive switching properties of tio2-x films
url http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
work_keys_str_mv AT ghenzin tuningtheresistiveswitchingpropertiesoftio2xfilms
AT rozenbergmj tuningtheresistiveswitchingpropertiesoftio2xfilms
AT llopisr tuningtheresistiveswitchingpropertiesoftio2xfilms
AT levyp tuningtheresistiveswitchingpropertiesoftio2xfilms
AT huesole tuningtheresistiveswitchingpropertiesoftio2xfilms
AT stoliarp tuningtheresistiveswitchingpropertiesoftio2xfilms
_version_ 1782030691064610816

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