Graphene epitaxial growth on SiC(0001) for resistance standards

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Detalles Bibliográficos
Autores principales: Real, Mariano, Lass, Eric A., Liu, Fan-Hung, Shen, Tian, Jones, George R., Soons, Johannes A., Newell, David B., Davydov, Albert V., Elmquist, Randolph E., INTI-Física y Metrología. Buenos Aires, AR, Institute of Electrical and Electronics Engineers. IEEE. New York, US
Formato: article
Lenguaje:Inglés
Publicado: IEEE 2013
Materias:
Resistencia eléctrica
Mediciones eléctricas
Difusión
Crecimiento
Morfología
Superficies
Grafito
Ensayos
Acceso en línea:http://www-biblio.inti.gob.ar:80/gsdl/collect/inti/index/assoc/HASH015c/c0bd034e.dir/doc.pdf
Aporte de:
Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI) de INTI
id I60-R166HASH015cc0bd034e83474012a179
record_format dspace
institution INTI
institution_str I-60
repository_str R-166
collection Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)
language Inglés
orig_language_str_mv eng
topic Resistencia eléctrica
Mediciones eléctricas
Difusión
Crecimiento
Morfología
Superficies
Grafito
Ensayos
spellingShingle Resistencia eléctrica
Mediciones eléctricas
Difusión
Crecimiento
Morfología
Superficies
Grafito
Ensayos
Real, Mariano
Lass, Eric A.
Liu, Fan-Hung
Shen, Tian
Jones, George R.
Soons, Johannes A.
Newell, David B.
Davydov, Albert V.
Elmquist, Randolph E.
INTI-Física y Metrología. Buenos Aires, AR
Institute of Electrical and Electronics Engineers. IEEE. New York, US
Graphene epitaxial growth on SiC(0001) for resistance standards
format article
author Real, Mariano
Lass, Eric A.
Liu, Fan-Hung
Shen, Tian
Jones, George R.
Soons, Johannes A.
Newell, David B.
Davydov, Albert V.
Elmquist, Randolph E.
INTI-Física y Metrología. Buenos Aires, AR
Institute of Electrical and Electronics Engineers. IEEE. New York, US
author_facet Real, Mariano
Lass, Eric A.
Liu, Fan-Hung
Shen, Tian
Jones, George R.
Soons, Johannes A.
Newell, David B.
Davydov, Albert V.
Elmquist, Randolph E.
INTI-Física y Metrología. Buenos Aires, AR
Institute of Electrical and Electronics Engineers. IEEE. New York, US
author_sort Real, Mariano
title Graphene epitaxial growth on SiC(0001) for resistance standards
title_short Graphene epitaxial growth on SiC(0001) for resistance standards
title_full Graphene epitaxial growth on SiC(0001) for resistance standards
title_fullStr Graphene epitaxial growth on SiC(0001) for resistance standards
title_full_unstemmed Graphene epitaxial growth on SiC(0001) for resistance standards
title_sort graphene epitaxial growth on sic(0001) for resistance standards
publisher IEEE
publishDate 2013
url http://www-biblio.inti.gob.ar:80/gsdl/collect/inti/index/assoc/HASH015c/c0bd034e.dir/doc.pdf
work_keys_str_mv AT realmariano grapheneepitaxialgrowthonsic0001forresistancestandards
AT lasserica grapheneepitaxialgrowthonsic0001forresistancestandards
AT liufanhung grapheneepitaxialgrowthonsic0001forresistancestandards
AT shentian grapheneepitaxialgrowthonsic0001forresistancestandards
AT jonesgeorger grapheneepitaxialgrowthonsic0001forresistancestandards
AT soonsjohannesa grapheneepitaxialgrowthonsic0001forresistancestandards
AT newelldavidb grapheneepitaxialgrowthonsic0001forresistancestandards
AT davydovalbertv grapheneepitaxialgrowthonsic0001forresistancestandards
AT elmquistrandolphe grapheneepitaxialgrowthonsic0001forresistancestandards
AT intifisicaymetrologiabuenosairesar grapheneepitaxialgrowthonsic0001forresistancestandards
AT instituteofelectricalandelectronicsengineersieeenewyorkus grapheneepitaxialgrowthonsic0001forresistancestandards
bdutipo_str Repositorios
_version_ 1764820544207716358

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