Graphene epitaxial growth on SiC(0001) for resistance standards

por Real, Mariano, Shen, Tian, Jones, George R., Elmquist, Randolph E., Soons, Johannes A., Davydov, Albert V., National Institute of Standards and Technology. NIST. Gaithersburg, US, INTI-Física y Metrología. Buenos Aires, AR, Conference on precision electromagnetic measurements
Publicado 2012

Graphene epitaxial growth on SiC(0001) for resistance standards

por Real, Mariano, Lass, Eric A., Liu, Fan-Hung, Shen, Tian, Jones, George R., Soons, Johannes A., Newell, David B., Davydov, Albert V., Elmquist, Randolph E., INTI-Física y Metrología. Buenos Aires, AR, Institute of Electrical and Electronics Engineers. IEEE. New York, US
Publicado 2013