Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters
The possibility to track the threshold voltage shifts caused by ionizing radiation in MOS dosimeters in a Zero Temperature Coefficient reference current is studied. 140 nm gate oxide p-channel MOS transistors were irradiated with a high dose rate 60Co γ-source to characterize their sensitivity to ra...
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| Formato: | CONF |
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p71_Carbonetto |
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todo:paper_97898716_v_n_p71_Carbonetto2023-10-03T16:45:29Z Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters Carbonetto, S.H. Inza, M.A.G. Lipovetzky, J. Redin, E.G. Salomone, L.S. Kasulin, A. Faigón, A. Dosimetry MOSFETs Radiation monitoring Temperature Gate oxide High dose rate Low dose radiation Mos dosimeter MOSFETs Order of magnitude P-channel MOS Radiation monitoring Reference currents Temperature error Threshold voltage shifts Zero temperature coefficients Dosimeters Heat radiation Ionizing radiation Monitoring MOSFET devices Nanoelectronics Nuclear reactors Threshold voltage Transistor transistor logic circuits Dosimetry The possibility to track the threshold voltage shifts caused by ionizing radiation in MOS dosimeters in a Zero Temperature Coefficient reference current is studied. 140 nm gate oxide p-channel MOS transistors were irradiated with a high dose rate 60Co γ-source to characterize their sensitivity to radiation. Results show that the error introduced by temperature can be minimized in one order of magnitude if the ZTC reference current is applied, but that the error increases as the device is irradiated. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p71_Carbonetto |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Dosimetry MOSFETs Radiation monitoring Temperature Gate oxide High dose rate Low dose radiation Mos dosimeter MOSFETs Order of magnitude P-channel MOS Radiation monitoring Reference currents Temperature error Threshold voltage shifts Zero temperature coefficients Dosimeters Heat radiation Ionizing radiation Monitoring MOSFET devices Nanoelectronics Nuclear reactors Threshold voltage Transistor transistor logic circuits Dosimetry |
| spellingShingle |
Dosimetry MOSFETs Radiation monitoring Temperature Gate oxide High dose rate Low dose radiation Mos dosimeter MOSFETs Order of magnitude P-channel MOS Radiation monitoring Reference currents Temperature error Threshold voltage shifts Zero temperature coefficients Dosimeters Heat radiation Ionizing radiation Monitoring MOSFET devices Nanoelectronics Nuclear reactors Threshold voltage Transistor transistor logic circuits Dosimetry Carbonetto, S.H. Inza, M.A.G. Lipovetzky, J. Redin, E.G. Salomone, L.S. Kasulin, A. Faigón, A. Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| topic_facet |
Dosimetry MOSFETs Radiation monitoring Temperature Gate oxide High dose rate Low dose radiation Mos dosimeter MOSFETs Order of magnitude P-channel MOS Radiation monitoring Reference currents Temperature error Threshold voltage shifts Zero temperature coefficients Dosimeters Heat radiation Ionizing radiation Monitoring MOSFET devices Nanoelectronics Nuclear reactors Threshold voltage Transistor transistor logic circuits Dosimetry |
| description |
The possibility to track the threshold voltage shifts caused by ionizing radiation in MOS dosimeters in a Zero Temperature Coefficient reference current is studied. 140 nm gate oxide p-channel MOS transistors were irradiated with a high dose rate 60Co γ-source to characterize their sensitivity to radiation. Results show that the error introduced by temperature can be minimized in one order of magnitude if the ZTC reference current is applied, but that the error increases as the device is irradiated. |
| format |
CONF |
| author |
Carbonetto, S.H. Inza, M.A.G. Lipovetzky, J. Redin, E.G. Salomone, L.S. Kasulin, A. Faigón, A. |
| author_facet |
Carbonetto, S.H. Inza, M.A.G. Lipovetzky, J. Redin, E.G. Salomone, L.S. Kasulin, A. Faigón, A. |
| author_sort |
Carbonetto, S.H. |
| title |
Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| title_short |
Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| title_full |
Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| title_fullStr |
Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| title_full_unstemmed |
Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters |
| title_sort |
temperature error minimization in low dose radiation measurements with 140 nm mos dosimeters |
| url |
http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p71_Carbonetto |
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