Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a meth...
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todo:paper_15497747_v61_n1_p21_Stoliar2023-10-03T16:23:14Z Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit Stoliar, P. Levy, P. Sanchez, M.J. Leyva, A.G. Albornoz, C.A. Gomez-Marlasca, F. Zanini, A. Toro Salazar, C. Ghenzi, N. Rozenberg, M.J. Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile memory devices may compete with currently available MLCs. © 2004-2012 IEEE. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sanchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage |
| spellingShingle |
Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage Stoliar, P. Levy, P. Sanchez, M.J. Leyva, A.G. Albornoz, C.A. Gomez-Marlasca, F. Zanini, A. Toro Salazar, C. Ghenzi, N. Rozenberg, M.J. Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit |
| topic_facet |
Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage |
| description |
We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile memory devices may compete with currently available MLCs. © 2004-2012 IEEE. |
| format |
JOUR |
| author |
Stoliar, P. Levy, P. Sanchez, M.J. Leyva, A.G. Albornoz, C.A. Gomez-Marlasca, F. Zanini, A. Toro Salazar, C. Ghenzi, N. Rozenberg, M.J. |
| author_facet |
Stoliar, P. Levy, P. Sanchez, M.J. Leyva, A.G. Albornoz, C.A. Gomez-Marlasca, F. Zanini, A. Toro Salazar, C. Ghenzi, N. Rozenberg, M.J. |
| author_sort |
Stoliar, P. |
| title |
Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit |
| title_short |
Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit |
| title_full |
Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit |
| title_fullStr |
Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit |
| title_full_unstemmed |
Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit |
| title_sort |
nonvolatile multilevel resistive switching memory cell: a transition metal oxide-based circuit |
| url |
http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar |
| work_keys_str_mv |
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1807320079687221248 |