Nonvolatile memory with multilevel switching: A basic model

An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carr...

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Detalles Bibliográficos
Autores principales: Rozenberg, M.J., Inoue, I.H., Sánchez, M.J.
Formato: JOUR
Materias:
Computer simulation
Electric resistance
Electrodes
Hysteresis
Interfaces (materials)
Mobile telecommunication systems
Monte Carlo methods
Network protocols
Perovskite
Phase separation
Probability
Random access storage
Silver
Switching
Ternary systems
Multilevel switching
Nonvolatile memory (NVM)
Ovonic unified memory (OUM)
Resistance random access memory (RRAM)
Nonvolatile storage
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00319007_v92_n17_p178302_Rozenberg
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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