Nonvolatile memory with multilevel switching: A basic model

An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carr...

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Detalles Bibliográficos
Autores principales: Rozenberg, M.J., Inoue, I.H., Sánchez, M.J.
Formato: JOUR
Materias:
Computer simulation
Electric resistance
Electrodes
Hysteresis
Interfaces (materials)
Mobile telecommunication systems
Monte Carlo methods
Network protocols
Perovskite
Phase separation
Probability
Random access storage
Silver
Switching
Ternary systems
Multilevel switching
Nonvolatile memory (NVM)
Ovonic unified memory (OUM)
Resistance random access memory (RRAM)
Nonvolatile storage
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00319007_v92_n17_p178302_Rozenberg
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_00319007_v92_n17_p178302_Rozenberg
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spelling todo:paper_00319007_v92_n17_p178302_Rozenberg2023-10-03T14:43:12Z Nonvolatile memory with multilevel switching: A basic model Rozenberg, M.J. Inoue, I.H. Sánchez, M.J. Computer simulation Electric resistance Electrodes Hysteresis Interfaces (materials) Mobile telecommunication systems Monte Carlo methods Network protocols Perovskite Phase separation Probability Random access storage Silver Switching Ternary systems Multilevel switching Nonvolatile memory (NVM) Ovonic unified memory (OUM) Resistance random access memory (RRAM) Nonvolatile storage An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carrier transfers occur between top and bottom domains, and the middle one, since the interdomain tunneling amplitudes are higher. The results show that the model captures multilevel switchability of the resistance, its memory retention and hysteretic behavior in the current-voltage curve. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00319007_v92_n17_p178302_Rozenberg
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Computer simulation
Electric resistance
Electrodes
Hysteresis
Interfaces (materials)
Mobile telecommunication systems
Monte Carlo methods
Network protocols
Perovskite
Phase separation
Probability
Random access storage
Silver
Switching
Ternary systems
Multilevel switching
Nonvolatile memory (NVM)
Ovonic unified memory (OUM)
Resistance random access memory (RRAM)
Nonvolatile storage
spellingShingle Computer simulation
Electric resistance
Electrodes
Hysteresis
Interfaces (materials)
Mobile telecommunication systems
Monte Carlo methods
Network protocols
Perovskite
Phase separation
Probability
Random access storage
Silver
Switching
Ternary systems
Multilevel switching
Nonvolatile memory (NVM)
Ovonic unified memory (OUM)
Resistance random access memory (RRAM)
Nonvolatile storage
Rozenberg, M.J.
Inoue, I.H.
Sánchez, M.J.
Nonvolatile memory with multilevel switching: A basic model
topic_facet Computer simulation
Electric resistance
Electrodes
Hysteresis
Interfaces (materials)
Mobile telecommunication systems
Monte Carlo methods
Network protocols
Perovskite
Phase separation
Probability
Random access storage
Silver
Switching
Ternary systems
Multilevel switching
Nonvolatile memory (NVM)
Ovonic unified memory (OUM)
Resistance random access memory (RRAM)
Nonvolatile storage
description An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carrier transfers occur between top and bottom domains, and the middle one, since the interdomain tunneling amplitudes are higher. The results show that the model captures multilevel switchability of the resistance, its memory retention and hysteretic behavior in the current-voltage curve.
format JOUR
author Rozenberg, M.J.
Inoue, I.H.
Sánchez, M.J.
author_facet Rozenberg, M.J.
Inoue, I.H.
Sánchez, M.J.
author_sort Rozenberg, M.J.
title Nonvolatile memory with multilevel switching: A basic model
title_short Nonvolatile memory with multilevel switching: A basic model
title_full Nonvolatile memory with multilevel switching: A basic model
title_fullStr Nonvolatile memory with multilevel switching: A basic model
title_full_unstemmed Nonvolatile memory with multilevel switching: A basic model
title_sort nonvolatile memory with multilevel switching: a basic model
url http://hdl.handle.net/20.500.12110/paper_00319007_v92_n17_p178302_Rozenberg
work_keys_str_mv AT rozenbergmj nonvolatilememorywithmultilevelswitchingabasicmodel
AT inoueih nonvolatilememorywithmultilevelswitchingabasicmodel
AT sanchezmj nonvolatilememorywithmultilevelswitchingabasicmodel
_version_ 1807317404365094912

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