Two resistive switching regimes in thin film manganite memory devices on silicon

Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Sim...

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Detalles Bibliográficos
Autores principales: Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., Rozenberg, M., Levy, P.
Formato: JOUR
Materias:
Compliance current
Drift model
Low costs
On/off ratio
Resistive switching
Resistive switching mechanisms
Compliant mechanisms
Manganese oxide
Oxygen vacancies
Switching systems
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC.

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