Two resistive switching regimes in thin film manganite memory devices on silicon
Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Sim...
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi |
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todo:paper_00036951_v103_n16_p_Rubi2023-10-03T13:56:32Z Two resistive switching regimes in thin film manganite memory devices on silicon Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P. Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems |
| spellingShingle |
Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P. Two resistive switching regimes in thin film manganite memory devices on silicon |
| topic_facet |
Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems |
| description |
Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC. |
| format |
JOUR |
| author |
Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P. |
| author_facet |
Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P. |
| author_sort |
Rubi, D. |
| title |
Two resistive switching regimes in thin film manganite memory devices on silicon |
| title_short |
Two resistive switching regimes in thin film manganite memory devices on silicon |
| title_full |
Two resistive switching regimes in thin film manganite memory devices on silicon |
| title_fullStr |
Two resistive switching regimes in thin film manganite memory devices on silicon |
| title_full_unstemmed |
Two resistive switching regimes in thin film manganite memory devices on silicon |
| title_sort |
two resistive switching regimes in thin film manganite memory devices on silicon |
| url |
http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi |
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