Two resistive switching regimes in thin film manganite memory devices on silicon

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Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Sim...

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Autores principales:	Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., Rozenberg, M., Levy, P.
Formato:	JOUR
Materias:	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00036951_v103_n16_p_Rubi
record_format	dspace
spelling	todo:paper_00036951_v103_n16_p_Rubi2023-10-03T13:56:32Z Two resistive switching regimes in thin film manganite memory devices on silicon Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P. Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems
spellingShingle	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P. Two resistive switching regimes in thin film manganite memory devices on silicon
topic_facet	Compliance current Drift model Low costs On/off ratio Resistive switching Resistive switching mechanisms Compliant mechanisms Manganese oxide Oxygen vacancies Switching systems
description	Bipolar resistive switching in low cost n-Si/La2/3Ca 1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness. © 2013 AIP Publishing LLC.
format	JOUR
author	Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P.
author_facet	Rubi, D. Tesler, F. Alposta, I. Kalstein, A. Ghenzi, N. Gomez-Marlasca, F. Rozenberg, M. Levy, P.
author_sort	Rubi, D.
title	Two resistive switching regimes in thin film manganite memory devices on silicon
title_short	Two resistive switching regimes in thin film manganite memory devices on silicon
title_full	Two resistive switching regimes in thin film manganite memory devices on silicon
title_fullStr	Two resistive switching regimes in thin film manganite memory devices on silicon
title_full_unstemmed	Two resistive switching regimes in thin film manganite memory devices on silicon
title_sort	two resistive switching regimes in thin film manganite memory devices on silicon
url	http://hdl.handle.net/20.500.12110/paper_00036951_v103_n16_p_Rubi
work_keys_str_mv	AT rubid tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT teslerf tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT alpostai tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT kalsteina tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT ghenzin tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT gomezmarlascaf tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT rozenbergm tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon AT levyp tworesistiveswitchingregimesinthinfilmmanganitememorydevicesonsilicon
_version_	1807317612351193088

Two resistive switching regimes in thin film manganite memory devices on silicon

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