Negative differential resistance in porous silicon devices at room temperature
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with...
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| Autores principales: | , , , , |
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| Formato: | Artículo |
| Lenguaje: | Inglés |
| Publicado: |
Elsevier Ltd.
2025
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| Materias: | |
| Acceso en línea: | http://repositorio.unne.edu.ar/handle/123456789/56448 |
| Aporte de: |
| Sumario: | We report a voltage controlled negative differential resistance
(NDR) effect at room temperature in two types of devices based
on porous silicon (PS): thermally oxidized porous silicon multilayer
with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/
Ag) and porous silicon single layer with Al electrodes in a coplanar
configuration (Al/PS/Al). The NDR effect was observed in current–
voltage characteristics and showed telegraphic noise. The NDR
effects showed a strong dependence with temperature and with
the surrounding atmospheric air pressure. The NDR occurrence
was attributed to the blocking of conduction channels due to
carrier trapping phenomena. We also experimentally demonstrate
porous silicon devices exploiting the NDR effect, with potential
applications as volatile memory devices. |
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