Negative differential resistance in porous silicon devices at room temperature

We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with...

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Autores principales: Marín Ramírez, Oscar Alonso, Toranzos, Víctor José, Urteaga, Raúl, Comedi, David Mario, Koropecki, Roberto Román
Formato: Artículo
Lenguaje:Inglés
Publicado: Elsevier Ltd. 2025
Materias:
Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
Acceso en línea:http://repositorio.unne.edu.ar/handle/123456789/56448
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RIUNNE - Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) de Universidad Nacional del Nordeste
id I48-R184-123456789-56448
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spelling I48-R184-123456789-564482025-03-06T11:03:55Z Negative differential resistance in porous silicon devices at room temperature Marín Ramírez, Oscar Alonso Toranzos, Víctor José Urteaga, Raúl Comedi, David Mario Koropecki, Roberto Román Negative differential resistance Porous silicon devices Telegraphic noise Coulomb repulsion We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices. 2025-02-25T19:58:52Z 2025-02-25T19:58:52Z 2015 Artículo Marín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036. http://repositorio.unne.edu.ar/handle/123456789/56448 eng http://dx.doi.org/10.1016/j.spmi.2014.12.019 openAccess http://creativecommons.org/licenses/by-nc-nd/2.5/ar/ application/pdf p. 45–53 application/pdf application/pdf Elsevier Ltd. Superlattices and Microstructures, 2015, vol. 79, p. 45–53
institution Universidad Nacional del Nordeste
institution_str I-48
repository_str R-184
collection RIUNNE - Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)
language Inglés
topic Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
spellingShingle Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
Marín Ramírez, Oscar Alonso
Toranzos, Víctor José
Urteaga, Raúl
Comedi, David Mario
Koropecki, Roberto Román
Negative differential resistance in porous silicon devices at room temperature
topic_facet Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
description We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
format Artículo
author Marín Ramírez, Oscar Alonso
Toranzos, Víctor José
Urteaga, Raúl
Comedi, David Mario
Koropecki, Roberto Román
author_facet Marín Ramírez, Oscar Alonso
Toranzos, Víctor José
Urteaga, Raúl
Comedi, David Mario
Koropecki, Roberto Román
author_sort Marín Ramírez, Oscar Alonso
title Negative differential resistance in porous silicon devices at room temperature
title_short Negative differential resistance in porous silicon devices at room temperature
title_full Negative differential resistance in porous silicon devices at room temperature
title_fullStr Negative differential resistance in porous silicon devices at room temperature
title_full_unstemmed Negative differential resistance in porous silicon devices at room temperature
title_sort negative differential resistance in porous silicon devices at room temperature
publisher Elsevier Ltd.
publishDate 2025
url http://repositorio.unne.edu.ar/handle/123456789/56448
work_keys_str_mv AT marinramirezoscaralonso negativedifferentialresistanceinporoussilicondevicesatroomtemperature
AT toranzosvictorjose negativedifferentialresistanceinporoussilicondevicesatroomtemperature
AT urteagaraul negativedifferentialresistanceinporoussilicondevicesatroomtemperature
AT comedidavidmario negativedifferentialresistanceinporoussilicondevicesatroomtemperature
AT koropeckirobertoroman negativedifferentialresistanceinporoussilicondevicesatroomtemperature
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