Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL set...
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| Otros Autores: | , , , , , , , , , , , |
| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
2006
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| Acceso en línea: | Registro en Scopus Handle Registro en la Biblioteca Digital |
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| LEADER | 06942caa a22008657a 4500 | ||
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| 001 | PAPER-6842 | ||
| 003 | AR-BaUEN | ||
| 005 | 20241128101738.0 | ||
| 008 | 190411s2006 xx ||||fo|||| 10| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-40949123226 | |
| 030 | |a MRSPD | ||
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Marconi, M.C. | |
| 245 | 1 | 0 | |a Nanopatterning and nanomachining with table-top extreme ultraviolet lasers |
| 260 | |c 2006 | ||
| 270 | 1 | 0 | |m Marconi, M. C.; Electrical and Computer Engineering, Colorado State University, 1373 Campus Delivery, Fort Collins, CO 80523, United States |
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| 506 | |2 openaire |e Política editorial | ||
| 520 | 3 | |a Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL setup to pattern lines and arrays of nano-dots with period smaller than 100 nm in a polymethil metacrylate (PMMA) coated Si wafer. Multiple exposure in the same sample added versatility to the patterning method allowing different motifs. Also, using the high peak power of the EUV laser, ablation of sub-100 nm holes in PMMA was also demonstrated. The smallest diameter ablated holes, 82 nm, were obtained by placing the sample at the third order focus of a Fresnell zone plate (FZP) lens. These results demonstrate the feasibility of sub-100 nm patterning of materials with a focused EUV laser beams, opening a path for the development of new nanoprobes and nanomachining tools. © 2007 Materials Research Society. |l eng | |
| 593 | |a Electrical and Computer Engineering, Colorado State University, 1373 Campus Delivery, Fort Collins, CO 80523, United States | ||
| 593 | |a NSF Engineering Research Center for Extreme Ultraviolet Science and Technology, Fort Collins, CO 80523, United States | ||
| 593 | |a Departamento de Fisica, Universidad de Buenos Aires, Ciudad Universitaria-Pabellon 1, Buenos Aires, C1428EHA, Argentina | ||
| 593 | |a Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States | ||
| 593 | |a University of California at Berkeley, Berkeley, CA 94720, United States | ||
| 593 | |a JMAR Technologies Inc., San Diego, CA 92127, United States | ||
| 690 | 1 | 0 | |a EXTREME ULTRAVIOLET LASERS |
| 690 | 1 | 0 | |a FRESNELL ZONE PLATE (FZP) LENS |
| 690 | 1 | 0 | |a EXTREME ULTRAVIOLET LITHOGRAPHY |
| 690 | 1 | 0 | |a PHOTORESISTS |
| 690 | 1 | 0 | |a POLYMETHYL METHACRYLATES |
| 690 | 1 | 0 | |a SILICON WAFERS |
| 690 | 1 | 0 | |a SEMICONDUCTOR QUANTUM DOTS |
| 700 | 1 | |a Wachulak, P.W. | |
| 700 | 1 | |a Capeluto, María Gabriela | |
| 700 | 1 | |a Vaschenko, G. | |
| 700 | 1 | |a Bravo, H. | |
| 700 | 1 | |a Menoni, C.S. | |
| 700 | 1 | |a Rocca, J. | |
| 700 | 1 | |a Anderson, E.H. | |
| 700 | 1 | |a Chao, W. | |
| 700 | 1 | |a Attwood, D. | |
| 700 | 1 | |a Hemberg, O. | |
| 700 | 1 | |a Frazer, B. | |
| 700 | 1 | |a Bloom, S. | |
| 711 | 2 | |c Boston, MA |d 27 November 2006 through 1 December 2006 |g Código de la conferencia: 71604 | |
| 773 | 0 | |d 2006 |g v. 961 |h pp. 230-235 |p Mater Res Soc Symp Proc |n Materials Research Society Symposium Proceedings |x 02729172 |z 9781604234138 |t 2006 MRS Fall Meeting | |
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