Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE.
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| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
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2011
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| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
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| LEADER | 08201caa a22008057a 4500 | ||
|---|---|---|---|
| 001 | PAPER-23546 | ||
| 003 | AR-BaUEN | ||
| 005 | 20250905102428.0 | ||
| 008 | 190411s2011 xx ||||fo|||| 10| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-84860111320 | |
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 100 | 1 | |a Quinteros, Cynthia Paula | |
| 245 | 1 | 0 | |a Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation |
| 260 | |c 2011 | ||
| 270 | 1 | 0 | |m Quinteros, C.; Consejo Nacional de Investigaciones Científicas Y Técnicas (CONICET), Comisión de Energía Atómica (CNEA), Gral. Paz 1499, San Martín (1650), Argentina; email: cquinter@tandar.cnea.gov.ar |
| 504 | |a Campabadal, F., Electrical characteristics of MIS structures with ALD Al2O3, HfO2 and Nanolaminates on different silicon substrates (2011) J. Vac. Sci. Technol. B, 29 (1) | ||
| 504 | |a Chowdhury, N.A., Misra, D., Charge Trapping at Deep States in Hf-Silicate Based High-K Gate Dielectrics (2007) Journal of the Electrochemical Society, 154 (2 G), pp. 30-37 | ||
| 504 | |a Reimbold, G., Mitard, J., Garros, X., Leroux, C., Ghibaudo, G., Martin, F., Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks (2007) Microelectronic Reliability, 47 | ||
| 504 | |a Liu, Y., Shanware, A., Colombo, L., Dutton, R., Modeling of Charge Trapping Induced Threshold-Voltage Instability in High-K Gate Dielectric FETs (2006) IEEE Electron Device Letters, 27 (6) | ||
| 504 | |a Zhang, W.D., Govoreanu, B., Zheng, X.F., Ruiz Aguado, D., Rosmeulen, M., Blomme, P., Zhang, J.F., Van Houdt, J., Two-Pulse C-V: A New Method for Characterizing Electron Traps in the Bulk of SiO2/high-k Dielectric Stacks (2008) IEEE Electron Device Letters, 29 (9) | ||
| 504 | |a Zheng, X.F., Zhang, W.D., Govoreanu, B., Ruiz Aguado, D., Zhang, J.F., Van Houdt, J., Energy and Spatial Distributions of Electron Traps Throughout SiO 2/Al2O3 Stacks as the IPD in Flash Memory Application (2010) IEEE Transactions on Electron Devices, 57 (1) | ||
| 504 | |a Cho, M., Degraeve, R., Roussel, P., Govoreanu, B., Kaczer, B., Zahid, M.B., Simoen, E., Groeseneken, G., A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique (2010) Solid-State Electronics, 54 | ||
| 504 | |a Houssa, M., Pantisano, L., Ragnarsson, L.-A., Degraeve, R., Schram, T., Pourtois, G., De Gendt, S., Heyns, M.M., Electrical properties of high-k gate dielectrics: Challenges, current issues, and possible solutions (2006) Materials Science and Engineering: Reports, 51 (4-6), pp. 37-85 | ||
| 504 | |a Libertino, Radiation effects in nitride read-only memories (2003) Annals of the ICRP, 33 (4) | ||
| 504 | |a Ergin, F.B., Turan, R., Shishiyanu, S.T., Yilmaz, E., Effect of gamma-radiation on HfO2 based MOS capacitor (2010) Nuclear Instruments and Methods in Physics Research B, 268, pp. 1482-1485 | ||
| 504 | |a Yilmaz, E., Dogan, I., Turan, R., Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate (2008) Nuclear Instruments and Methods in Physics Research B, 266, pp. 4896-4898 | ||
| 504 | |a Felix, J.A., Shaneyfelt, M.R., Fleetwood, D.M., Meisenheimer, T.L., Schwank, J.R., Schrimpf, D., Dodd, P.E., D'Emic, C., Radiation-Induced Charge Trapping in Thin Al2O3/SiOxNt/Si(100) Gate Dielectric Stacks (2003) IEEE Transactions on Nuclear Science, 50 (6), pp. 1910-1918 | ||
| 504 | |a Zhou, X.J., Fleetwood, D.M., Felix, J.A., Gusev, E.P., D'Emic, C., Bias-Temperature Instabilities and Radiation Effecs in MOS Devices (2005) IEEE Transactions on Nuclear Science, 52 (6), pp. 2231-2238 | ||
| 504 | |a McWhorter, P.J., Miller, S.L., Miller, W.M., Modeling the anneal of radiation-induced trapped holes in a varying thermal environment (1990) IEEE Transactions on Nuclear Science, 37 (6) | ||
| 504 | |a Savić, Z., Radjenović, B., Pejović, M., Stojadinović, N., The Contribution of Border Traps to the Threshold Voltage Shift in pMOS Dosimetric Transistors (1995) IEEE Transactions on Nuclear Science, 42 (4) | ||
| 504 | |a Xu, Z., Pantisano, L., Kerber, A., Degraeve, R., Cartier, E., De Gendt, S., Heyns, M., Groeseneken, G., A Study of Relaxation Current in High-K Dielectric Stacks (2004) IEEE Transactions on Electron Devices, 51 (3) | ||
| 504 | |a Nicollian, Brews, (1982) MOS Physics and Technology, , Wiley | ||
| 504 | |a Thangadurai, P., Kaplan, W.D., Mikhelashvili, V., Einsenstein, G., The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers (2009) Microelectronics Reliability, 49, pp. 716-720 | ||
| 504 | |a Mikhelashvili, V., Paramasivam, T., Kaplan, W.D., Brener, R., Saguy, C., Einsenstein, G., The use of nanolaminates to obtain structurally stable high-k films with superior electrical properties: HfNO-HfTiO (2008) J. Appl. Phys., 103, p. 114106 | ||
| 504 | |a Ma, T.P., Dressendorfer, P.V., (1989) Ionizing Radiation Effects in MOS Devices & Circuits, , John Wiley & Sons, New York | ||
| 504 | |a Fleta, C., Campabadal, F., Rafí, J.M., Lozano, M., Ullán, M., Highenergy proton irradiation effects on tunneling MOS capacitors (2004) Microelectronic Engineering, 72 (1-4), pp. 85-89 | ||
| 504 | |a Yamaguchi, M., Taylor, S.J., Yang, M.-J., Matsuda, S., Kawasaki, O., Hisamatsu, T., High-energy and high-fluence proton irradiation effects in silicon solar cells (1996) J. Appl. Phys., 80, pp. 4916-4920A4 - Ministerio de Ciencia e Innovacion (AYA2011-13921-E); Universidad de Sevilla (Plan Propio); Junta de Andalucia (Regional Government) | ||
| 506 | |2 openaire |e Política editorial | ||
| 520 | 3 | |a MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE. |l eng | |
| 593 | |a Consejo Nacional de Investigaciones Científicas Y Técnicas (CONICET), Comisión de Energía Atómica (CNEA), Gral. Paz 1499, San Martín (1650), Argentina | ||
| 593 | |a Device Physics Laboratory-Microelectronics, Departamento de Física, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Buenos Aires, Argentina | ||
| 593 | |a Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (CSIC), Spain | ||
| 593 | |a CONICET, Spain | ||
| 690 | 1 | 0 | |a HIGH-K GATE DIELECTRICS |
| 690 | 1 | 0 | |a MOS DEVICES |
| 690 | 1 | 0 | |a RADIATION EFFECTS |
| 690 | 1 | 0 | |a C-V CURVE |
| 690 | 1 | 0 | |a CAPACITIVE STRUCTURE |
| 690 | 1 | 0 | |a COMPARATIVE ANALYSIS |
| 690 | 1 | 0 | |a HIGH-K DIELECTRIC |
| 690 | 1 | 0 | |a HIGH-K GATE DIELECTRICS |
| 690 | 1 | 0 | |a DIELECTRIC MATERIALS |
| 690 | 1 | 0 | |a MOS DEVICES |
| 690 | 1 | 0 | |a RADIATION EFFECTS |
| 700 | 1 | |a Sambuco Salomone, L. | |
| 700 | 1 | |a Redin, Eduardo Gabriel | |
| 700 | 1 | |a Rafí, J.M. | |
| 700 | 1 | |a Zabala, M. | |
| 700 | 1 | |a Faigón, Adrián Néstor | |
| 700 | 1 | |a Palumbo, Félix Roberto Mario | |
| 700 | 1 | |a Campabadal, Francesca | |
| 711 | 2 | |c Sevilla |d 19 September 2011 through 23 September 2011 |g Código de la conferencia: 89368 | |
| 773 | 0 | |d 2011 |h pp. 67-72 |p Eur Conf Rad Effects Compon Syst |n Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS |z 9781457705878 |t 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 | |
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| 856 | 4 | 0 | |u https://doi.org/10.1109/RADECS.2011.6131387 |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros |y Handle |
| 856 | 4 | 0 | |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814577_v_n_p67_Quinteros |y Registro en la Biblioteca Digital |
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| 999 | |c 84499 | ||