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Computer simulation
8
Manganese oxide
Resistance state
Resistive switching
8
Applied electric field
4
Electric fields
4
Experiments
4
High resistance
4
High-resistance state
4
Hysteresis
4
Hysteresis switching
4
Initial state
4
Interface states
4
Low-resistance state
4
Microscopic mechanisms
4
Model simulation
4
Multipulses
4
Nonvolatile memory devices
4
Oxide interfaces
4
Oxygen
4
Oxygen vacancies
4
Realistic model
4
Resistance values
4
Room temperature
4
Switching
4
Switching thresholds
4
Time constants
4
Transition metal compounds
4
Transition metals
4
Transition-metal oxides
4
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3Artículo publishedVersion
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4por Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Publicado 2012Artículo publishedVersion -
5Artículo publishedVersion
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6por Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Publicado 2012Artículo publishedVersion -
7JOUR
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