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Manganese oxide
4
Oxygen vacancies
Resistive switching
4
Transition metals
4
Vacancies
Applied electric field
3
Computer simulation
3
Electric fields
3
Hysteresis
3
Hysteresis switching
3
Initial state
3
Microscopic mechanisms
3
Oxygen
3
Realistic model
3
Resistance state
3
Switching
3
Switching thresholds
3
Transition metal compounds
3
Transition-metal oxides
3
Memristors
1
Minimum feature sizes
1
Model simulation
1
Physical limits
1
Resistive switching behaviors
1
Shock waves
1
Silicon-based technology
1
Technological aspects
1
Transition metal oxides
1
Trial and error
1
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1Artículo publishedVersion
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