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Computer simulation
4
Manganese oxide
4
Resistance state
4
Resistive switching
Applied electric field
2
Electric fields
2
Experiments
2
High resistance
2
High-resistance state
2
Hysteresis
2
Hysteresis switching
2
Initial state
2
Interface states
2
Low-resistance state
2
Microscopic mechanisms
2
Model simulation
2
Multipulses
2
Nonvolatile memory devices
2
Oxide interfaces
2
Oxygen
2
Oxygen vacancies
2
Realistic model
2
Resistance values
2
Room temperature
2
Switching
2
Switching thresholds
2
Time constants
2
Transition metal compounds
2
Transition metals
2
Transition-metal oxides
2
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1Artículo publishedVersion
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2por Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Publicado 2012Artículo publishedVersion -
3Artículo publishedVersion
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4por Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Publicado 2012Artículo publishedVersion