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Manganese oxide
Resistive switching
8
Computer simulation
6
Resistance state
6
Oxygen vacancies
5
Hysteresis
4
Hysteresis switching
4
Oxygen
4
Resistance values
4
Switching
4
Applied electric field
3
Electric fields
3
Experiments
3
High resistance
3
High-resistance state
3
Initial state
3
Interface states
3
Low-resistance state
3
Microscopic mechanisms
3
Model simulation
3
Multipulses
3
Nonvolatile memory devices
3
Oxide interfaces
3
Realistic model
3
Room temperature
3
Switching thresholds
3
Time constants
3
Transition metal compounds
3
Transition metals
3
Transition-metal oxides
3
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1Artículo publishedVersion
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2por Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Publicado 2012Artículo publishedVersion -
3Artículo publishedVersion
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4por Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Publicado 2012Artículo publishedVersion -
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