Strong electron correlation effects in non-volatile electronic memory devices

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We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transi...

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Detalles Bibliográficos
Autores principales: Inoue, I.H., Rozenberg, M.J., Yasuda, S., Sánchezll, M.J., Yamazaki, M., Manageo, T., Akinaga, H., Takagi, H., Akoh, H., Tokura, Y.
Formato: CONF
Materias:
Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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