Strong electron correlation effects in non-volatile electronic memory devices
We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transi...
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue |
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todo:paper_NIS03824_v_n_p131_Inoue2023-10-03T16:45:45Z Strong electron correlation effects in non-volatile electronic memory devices Inoue, I.H. Rozenberg, M.J. Yasuda, S. Sánchezll, M.J. Yamazaki, M. Manageo, T. Akinaga, H. Takagi, H. Akoh, H. Tokura, Y. Computational methods Electric insulators Electronic equipment Interfaces (computer) Mathematical models Sandwich structures Semiconductor materials Switching systems Correlated electron devices Domain-tunneling (DT) Non volatile memory devices Semiconductor/metal interfaces Data storage equipment We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Computational methods Electric insulators Electronic equipment Interfaces (computer) Mathematical models Sandwich structures Semiconductor materials Switching systems Correlated electron devices Domain-tunneling (DT) Non volatile memory devices Semiconductor/metal interfaces Data storage equipment |
| spellingShingle |
Computational methods Electric insulators Electronic equipment Interfaces (computer) Mathematical models Sandwich structures Semiconductor materials Switching systems Correlated electron devices Domain-tunneling (DT) Non volatile memory devices Semiconductor/metal interfaces Data storage equipment Inoue, I.H. Rozenberg, M.J. Yasuda, S. Sánchezll, M.J. Yamazaki, M. Manageo, T. Akinaga, H. Takagi, H. Akoh, H. Tokura, Y. Strong electron correlation effects in non-volatile electronic memory devices |
| topic_facet |
Computational methods Electric insulators Electronic equipment Interfaces (computer) Mathematical models Sandwich structures Semiconductor materials Switching systems Correlated electron devices Domain-tunneling (DT) Non volatile memory devices Semiconductor/metal interfaces Data storage equipment |
| description |
We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE. |
| format |
CONF |
| author |
Inoue, I.H. Rozenberg, M.J. Yasuda, S. Sánchezll, M.J. Yamazaki, M. Manageo, T. Akinaga, H. Takagi, H. Akoh, H. Tokura, Y. |
| author_facet |
Inoue, I.H. Rozenberg, M.J. Yasuda, S. Sánchezll, M.J. Yamazaki, M. Manageo, T. Akinaga, H. Takagi, H. Akoh, H. Tokura, Y. |
| author_sort |
Inoue, I.H. |
| title |
Strong electron correlation effects in non-volatile electronic memory devices |
| title_short |
Strong electron correlation effects in non-volatile electronic memory devices |
| title_full |
Strong electron correlation effects in non-volatile electronic memory devices |
| title_fullStr |
Strong electron correlation effects in non-volatile electronic memory devices |
| title_full_unstemmed |
Strong electron correlation effects in non-volatile electronic memory devices |
| title_sort |
strong electron correlation effects in non-volatile electronic memory devices |
| url |
http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue |
| work_keys_str_mv |
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| _version_ |
1807320416912408576 |