Strong electron correlation effects in non-volatile electronic memory devices

Mostrar todas las versiones(2)

We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transi...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Inoue, I.H., Rozenberg, M.J., Yasuda, S., Sánchezll, M.J., Yamazaki, M., Manageo, T., Akinaga, H., Takagi, H., Akoh, H., Tokura, Y.
Formato: CONF
Materias:
Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE.

Ejemplares similares