Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation

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The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of t...

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Detalles Bibliográficos
Autores principales:	Lipovetzky, J., Redin, E., Inza, M.G., Carbonetto, S., Faigón, A.
Formato:	CONF
Materias:	Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_97814244_v_n_p41_Lipovetzky
record_format	dspace
spelling	todo:paper_97814244_v_n_p41_Lipovetzky2023-10-03T16:43:10Z Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation Lipovetzky, J. Redin, E. Inza, M.G. Carbonetto, S. Faigón, A. Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation
spellingShingle	Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation Lipovetzky, J. Redin, E. Inza, M.G. Carbonetto, S. Faigón, A. Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
topic_facet	Built-in potential Gamma irradiation Gate oxide thickness Gate voltages Metal oxide semiconductor Mos dosimeter Oxide charge Radiation-induced Switched bias Temperature effects Thermal-annealing Dosimeters Dosimetry Metallic compounds MOS devices Nanoelectronics Irradiation
description	The responses to gamma-irradiation of 70 nm and 140 nm gate oxide thickness MOS dosimeters are characterized at different temperatures during oxide charge buildup and radiation induced charge neutralization. Three contributions to the threshold voltage evolution are observed at different ranges of temperatures and gate voltages: a shift in VT caused by a change in the built in potential, thermal annealing which occurs even during irradiation, and a third contribution probably associated with changes of transport or capture parameters with temperature.
format	CONF
author	Lipovetzky, J. Redin, E. Inza, M.G. Carbonetto, S. Faigón, A.
author_facet	Lipovetzky, J. Redin, E. Inza, M.G. Carbonetto, S. Faigón, A.
author_sort	Lipovetzky, J.
title	Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
title_short	Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
title_full	Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
title_fullStr	Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
title_full_unstemmed	Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
title_sort	temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation
url	http://hdl.handle.net/20.500.12110/paper_97814244_v_n_p41_Lipovetzky
work_keys_str_mv	AT lipovetzkyj temperatureeffectsonmetaloxidesemiconductordosimetersduringswitchedbiasirradiation AT redine temperatureeffectsonmetaloxidesemiconductordosimetersduringswitchedbiasirradiation AT inzamg temperatureeffectsonmetaloxidesemiconductordosimetersduringswitchedbiasirradiation AT carbonettos temperatureeffectsonmetaloxidesemiconductordosimetersduringswitchedbiasirradiation AT faigona temperatureeffectsonmetaloxidesemiconductordosimetersduringswitchedbiasirradiation
_version_	1807314975493980160

Temperature effects on metal oxide semiconductor dosimeters during switched bias irradiation

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