Shock waves and commutation speed of memristors

Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electron...

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Detalles Bibliográficos
Autores principales: Tang, S., Tesler, F., Marlasca, F.G., Levy, P., Dobrosavljevic, V., Rozenberg, M.
Formato: JOUR
Materias:
Manganese oxide
Memristors
Oxygen vacancies
Transition metal oxides
Transition metals
Vacancies
Minimum feature sizes
Model simulation
Physical limits
Resistive switching
Resistive switching behaviors
Silicon-based technology
Technological aspects
Trial and error
Shock waves
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_21603308_v6_n1_p_Tang
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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