Shock waves and commutation speed of memristors
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electron...
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todo:paper_21603308_v6_n1_p_Tang2023-10-03T16:39:31Z Shock waves and commutation speed of memristors Tang, S. Tesler, F. Marlasca, F.G. Levy, P. Dobrosavljevic, V. Rozenberg, M. Manganese oxide Memristors Oxygen vacancies Transition metal oxides Transition metals Vacancies Minimum feature sizes Model simulation Physical limits Resistive switching Resistive switching behaviors Silicon-based technology Technological aspects Trial and error Shock waves Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_21603308_v6_n1_p_Tang |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Manganese oxide Memristors Oxygen vacancies Transition metal oxides Transition metals Vacancies Minimum feature sizes Model simulation Physical limits Resistive switching Resistive switching behaviors Silicon-based technology Technological aspects Trial and error Shock waves |
| spellingShingle |
Manganese oxide Memristors Oxygen vacancies Transition metal oxides Transition metals Vacancies Minimum feature sizes Model simulation Physical limits Resistive switching Resistive switching behaviors Silicon-based technology Technological aspects Trial and error Shock waves Tang, S. Tesler, F. Marlasca, F.G. Levy, P. Dobrosavljevic, V. Rozenberg, M. Shock waves and commutation speed of memristors |
| topic_facet |
Manganese oxide Memristors Oxygen vacancies Transition metal oxides Transition metals Vacancies Minimum feature sizes Model simulation Physical limits Resistive switching Resistive switching behaviors Silicon-based technology Technological aspects Trial and error Shock waves |
| description |
Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. |
| format |
JOUR |
| author |
Tang, S. Tesler, F. Marlasca, F.G. Levy, P. Dobrosavljevic, V. Rozenberg, M. |
| author_facet |
Tang, S. Tesler, F. Marlasca, F.G. Levy, P. Dobrosavljevic, V. Rozenberg, M. |
| author_sort |
Tang, S. |
| title |
Shock waves and commutation speed of memristors |
| title_short |
Shock waves and commutation speed of memristors |
| title_full |
Shock waves and commutation speed of memristors |
| title_fullStr |
Shock waves and commutation speed of memristors |
| title_full_unstemmed |
Shock waves and commutation speed of memristors |
| title_sort |
shock waves and commutation speed of memristors |
| url |
http://hdl.handle.net/20.500.12110/paper_21603308_v6_n1_p_Tang |
| work_keys_str_mv |
AT tangs shockwavesandcommutationspeedofmemristors AT teslerf shockwavesandcommutationspeedofmemristors AT marlascafg shockwavesandcommutationspeedofmemristors AT levyp shockwavesandcommutationspeedofmemristors AT dobrosavljevicv shockwavesandcommutationspeedofmemristors AT rozenbergm shockwavesandcommutationspeedofmemristors |
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1782027970888597504 |