Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems

We present a theoretical analysis of the lateral displacement (Goos-Hänchen shift) of spatially limited beams reflected from attenuated total reflection (ATR) devices in the Otto configuration when backward surface plasmon polaritons are excited at the interface between a positive refractive index s...

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Autores principales: Zeller, M.A., Cuevas, M., Depine, R.A.
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_20408978_v17_n5_p1_Zeller
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spelling todo:paper_20408978_v17_n5_p1_Zeller2023-10-03T16:37:49Z Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems Zeller, M.A. Cuevas, M. Depine, R.A. Attenuated total reflection Backward waves Lateral shift Limited beams Metamaterials Surface plasmons Electromagnetic wave polarization Electromagnetic wave reflection Excited states Metamaterials Particle optics Phonons Photons Plasmons Quantum theory Refractive index Surface plasmon resonance Surface waves Attenuated total reflections Backward waves Lateral shifts Limited beams Surface plasmons Gaussian beams We present a theoretical analysis of the lateral displacement (Goos-Hänchen shift) of spatially limited beams reflected from attenuated total reflection (ATR) devices in the Otto configuration when backward surface plasmon polaritons are excited at the interface between a positive refractive index slab and a semi-infinite metamaterial with a negative refractive index. First, the stationary phase approximation and a phenomenological model based on the properties of the complex poles and zeroes of the reflection coefficient are used to demonstrate that: (i) the excitation of backward surface waves can lead to both negative and positive (and not exclusively negative) Goos-Hänchen shifts, and (ii) the sign of the shift depends on whether the value of the coupling layer thickness is higher or lower than a critical value characteristic of the ATR structure. Then, these findings are verified through rigorous calculations of the spatial structure of the reflected beam. For incident beams with a Gaussian profile, the lateral shift calculated as the first moment of the field distribution of the reflected beam agrees quite well with the predictions of approximate analysis. Near the resonant excitation of the backward surface plasmon polariton, large (negative or positive) Goos-Hänchen shifts are obtained, along with a splitting of the reflected beam. © 2015 IOP Publishing Ltd. Fil:Cuevas, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Depine, R.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_20408978_v17_n5_p1_Zeller
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Attenuated total reflection
Backward waves
Lateral shift
Limited beams
Metamaterials
Surface plasmons
Electromagnetic wave polarization
Electromagnetic wave reflection
Excited states
Metamaterials
Particle optics
Phonons
Photons
Plasmons
Quantum theory
Refractive index
Surface plasmon resonance
Surface waves
Attenuated total reflections
Backward waves
Lateral shifts
Limited beams
Surface plasmons
Gaussian beams
spellingShingle Attenuated total reflection
Backward waves
Lateral shift
Limited beams
Metamaterials
Surface plasmons
Electromagnetic wave polarization
Electromagnetic wave reflection
Excited states
Metamaterials
Particle optics
Phonons
Photons
Plasmons
Quantum theory
Refractive index
Surface plasmon resonance
Surface waves
Attenuated total reflections
Backward waves
Lateral shifts
Limited beams
Surface plasmons
Gaussian beams
Zeller, M.A.
Cuevas, M.
Depine, R.A.
Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
topic_facet Attenuated total reflection
Backward waves
Lateral shift
Limited beams
Metamaterials
Surface plasmons
Electromagnetic wave polarization
Electromagnetic wave reflection
Excited states
Metamaterials
Particle optics
Phonons
Photons
Plasmons
Quantum theory
Refractive index
Surface plasmon resonance
Surface waves
Attenuated total reflections
Backward waves
Lateral shifts
Limited beams
Surface plasmons
Gaussian beams
description We present a theoretical analysis of the lateral displacement (Goos-Hänchen shift) of spatially limited beams reflected from attenuated total reflection (ATR) devices in the Otto configuration when backward surface plasmon polaritons are excited at the interface between a positive refractive index slab and a semi-infinite metamaterial with a negative refractive index. First, the stationary phase approximation and a phenomenological model based on the properties of the complex poles and zeroes of the reflection coefficient are used to demonstrate that: (i) the excitation of backward surface waves can lead to both negative and positive (and not exclusively negative) Goos-Hänchen shifts, and (ii) the sign of the shift depends on whether the value of the coupling layer thickness is higher or lower than a critical value characteristic of the ATR structure. Then, these findings are verified through rigorous calculations of the spatial structure of the reflected beam. For incident beams with a Gaussian profile, the lateral shift calculated as the first moment of the field distribution of the reflected beam agrees quite well with the predictions of approximate analysis. Near the resonant excitation of the backward surface plasmon polariton, large (negative or positive) Goos-Hänchen shifts are obtained, along with a splitting of the reflected beam. © 2015 IOP Publishing Ltd.
format JOUR
author Zeller, M.A.
Cuevas, M.
Depine, R.A.
author_facet Zeller, M.A.
Cuevas, M.
Depine, R.A.
author_sort Zeller, M.A.
title Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
title_short Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
title_full Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
title_fullStr Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
title_full_unstemmed Critical coupling layer thickness for positive or negative Goos-Hänchen shifts near the excitation of backward surface polaritons in Otto-ATR systems
title_sort critical coupling layer thickness for positive or negative goos-hänchen shifts near the excitation of backward surface polaritons in otto-atr systems
url http://hdl.handle.net/20.500.12110/paper_20408978_v17_n5_p1_Zeller
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AT cuevasm criticalcouplinglayerthicknessforpositiveornegativegooshanchenshiftsneartheexcitationofbackwardsurfacepolaritonsinottoatrsystems
AT depinera criticalcouplinglayerthicknessforpositiveornegativegooshanchenshiftsneartheexcitationofbackwardsurfacepolaritonsinottoatrsystems
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