Manganite-based memristive heterojunction with tunable non-linear I-V characteristics

A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heteroju...

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Autores principales: Lee, H.-S., Park, H.-H., Rozenberg, M.J.
Formato: JOUR
Materias:
Heterojunctions
Manganese oxide
Manganites
Nonvolatile storage
Cross-point array
High-density integration
Non linear
Non-linear I-V
Perovskite manganites
Redox mechanism
Resistive Random Access Memory (ReRAM)
Resistive switching
Random access storage
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_20403364_v7_n15_p6444_Lee
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_20403364_v7_n15_p6444_Lee2023-10-03T16:37:46Z Manganite-based memristive heterojunction with tunable non-linear I-V characteristics Lee, H.-S. Park, H.-H. Rozenberg, M.J. Heterojunctions Manganese oxide Manganites Nonvolatile storage Cross-point array High-density integration Non linear Non-linear I-V Perovskite manganites Redox mechanism Resistive Random Access Memory (ReRAM) Resistive switching Random access storage A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr1-xCaxMnO3 (PCMO) and CaMnO3-δ (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO. This journal is © The Royal Society of Chemistry. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_20403364_v7_n15_p6444_Lee
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Heterojunctions
Manganese oxide
Manganites
Nonvolatile storage
Cross-point array
High-density integration
Non linear
Non-linear I-V
Perovskite manganites
Redox mechanism
Resistive Random Access Memory (ReRAM)
Resistive switching
Random access storage
spellingShingle Heterojunctions
Manganese oxide
Manganites
Nonvolatile storage
Cross-point array
High-density integration
Non linear
Non-linear I-V
Perovskite manganites
Redox mechanism
Resistive Random Access Memory (ReRAM)
Resistive switching
Random access storage
Lee, H.-S.
Park, H.-H.
Rozenberg, M.J.
Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
topic_facet Heterojunctions
Manganese oxide
Manganites
Nonvolatile storage
Cross-point array
High-density integration
Non linear
Non-linear I-V
Perovskite manganites
Redox mechanism
Resistive Random Access Memory (ReRAM)
Resistive switching
Random access storage
description A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heterojunction stack solely made of members of the perovskite manganite family Pr1-xCaxMnO3 (PCMO) and CaMnO3-δ (CMO) which show electroforming-free bipolar resistive switching. The heterojunction consists of rectifying interfaces and shows a symmetrical and tunable non-linear current-voltage curve. The spectromicroscopic measurements support the scenario of specialized roles, with the memristive effect taking place at the active Al-PCMO interface via a redox mechanism, while non-linearity was achieved by adopting a rectifying double interface PCMO-CMO-PCMO. This journal is © The Royal Society of Chemistry.
format JOUR
author Lee, H.-S.
Park, H.-H.
Rozenberg, M.J.
author_facet Lee, H.-S.
Park, H.-H.
Rozenberg, M.J.
author_sort Lee, H.-S.
title Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
title_short Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
title_full Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
title_fullStr Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
title_full_unstemmed Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
title_sort manganite-based memristive heterojunction with tunable non-linear i-v characteristics
url http://hdl.handle.net/20.500.12110/paper_20403364_v7_n15_p6444_Lee
work_keys_str_mv AT leehs manganitebasedmemristiveheterojunctionwithtunablenonlinearivcharacteristics
AT parkhh manganitebasedmemristiveheterojunctionwithtunablenonlinearivcharacteristics
AT rozenbergmj manganitebasedmemristiveheterojunctionwithtunablenonlinearivcharacteristics
_version_ 1807321690657521664

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