Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots

In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) a...

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Autores principales: Alcalde, A.M., Sanz, L., Romano, C., Marques, G.E.
Formato: JOUR
Materias:
Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_15571939_v23_n1_p175_Alcalde
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spelling todo:paper_15571939_v23_n1_p175_Alcalde2023-10-03T16:25:42Z Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots Alcalde, A.M. Sanz, L. Romano, C. Marques, G.E. Quantum dots Spin relaxation Deformation potential Electron phonon Electron-spin relaxation G factors Phonon modulation Quantum Dot Spin flip transitions Spin orbit interactions Spin relaxation Spin-phonon interactions Dynamic positioning Electrons Percolation (solid state) Phonons Semiconductor quantum dots Spin dynamics In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) and piezoelectric (PE) coupling to the spin relaxation. We reveal the importance of an appropriate description of the electron Landé g-factor in the calculation of the rates. Our results demonstrate that, for narrow-gap materials, the DP interaction becomes the dominant one. This behavior is not observed in wide or intermediate gap semiconductors, where the PE coupling, in general, governs the relaxation processes. © 2009 Springer Science+Business Media, LLC. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin relaxation
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
spellingShingle Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin relaxation
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
Alcalde, A.M.
Sanz, L.
Romano, C.
Marques, G.E.
Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
topic_facet Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin relaxation
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
description In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) and piezoelectric (PE) coupling to the spin relaxation. We reveal the importance of an appropriate description of the electron Landé g-factor in the calculation of the rates. Our results demonstrate that, for narrow-gap materials, the DP interaction becomes the dominant one. This behavior is not observed in wide or intermediate gap semiconductors, where the PE coupling, in general, governs the relaxation processes. © 2009 Springer Science+Business Media, LLC.
format JOUR
author Alcalde, A.M.
Sanz, L.
Romano, C.
Marques, G.E.
author_facet Alcalde, A.M.
Sanz, L.
Romano, C.
Marques, G.E.
author_sort Alcalde, A.M.
title Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_short Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_full Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_fullStr Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_full_unstemmed Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_sort electron spin relaxation due to phonon modulation of the rashba interaction in quantum dots
url http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
work_keys_str_mv AT alcaldeam electronspinrelaxationduetophononmodulationoftherashbainteractioninquantumdots
AT sanzl electronspinrelaxationduetophononmodulationoftherashbainteractioninquantumdots
AT romanoc electronspinrelaxationduetophononmodulationoftherashbainteractioninquantumdots
AT marquesge electronspinrelaxationduetophononmodulationoftherashbainteractioninquantumdots
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