Dc four-point resistance of a double-barrier quantum pump
We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistan...
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_10980121_v79_n8_p_Foieri |
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todo:paper_10980121_v79_n8_p_Foieri2023-10-03T16:06:13Z Dc four-point resistance of a double-barrier quantum pump Foieri, F. Arrachea, L. Sánchez, M.J. We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result valid beyond the adiabatic pumping regime can be taken as an indication of the universal character of R4t as a measure of the resistive properties of a sample, irrespectively, of the mechanism used to induce the transport. © 2009 The American Physical Society. Fil:Foieri, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v79_n8_p_Foieri |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
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R-134 |
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| description |
We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result valid beyond the adiabatic pumping regime can be taken as an indication of the universal character of R4t as a measure of the resistive properties of a sample, irrespectively, of the mechanism used to induce the transport. © 2009 The American Physical Society. |
| format |
JOUR |
| author |
Foieri, F. Arrachea, L. Sánchez, M.J. |
| spellingShingle |
Foieri, F. Arrachea, L. Sánchez, M.J. Dc four-point resistance of a double-barrier quantum pump |
| author_facet |
Foieri, F. Arrachea, L. Sánchez, M.J. |
| author_sort |
Foieri, F. |
| title |
Dc four-point resistance of a double-barrier quantum pump |
| title_short |
Dc four-point resistance of a double-barrier quantum pump |
| title_full |
Dc four-point resistance of a double-barrier quantum pump |
| title_fullStr |
Dc four-point resistance of a double-barrier quantum pump |
| title_full_unstemmed |
Dc four-point resistance of a double-barrier quantum pump |
| title_sort |
dc four-point resistance of a double-barrier quantum pump |
| url |
http://hdl.handle.net/20.500.12110/paper_10980121_v79_n8_p_Foieri |
| work_keys_str_mv |
AT foierif dcfourpointresistanceofadoublebarrierquantumpump AT arracheal dcfourpointresistanceofadoublebarrierquantumpump AT sanchezmj dcfourpointresistanceofadoublebarrierquantumpump |
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1782027916320702464 |