Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
We calculate the tunneling magnetoresistance (TMR) of Fe ZnSe Fe ZnSe Fe (001) double magnetic tunnel junctions (DMTJs) as a function of the in-between Fe layer's thickness, and compare these results with those of Fe ZnSe Fe simple junctions. The electronic band structures are modeled by a para...
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| Autores principales: | Peralta-Ramos, J., Llois, A.M. |
|---|---|
| Formato: | JOUR |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_10980121_v73_n21_p_PeraltaRamos |
| Aporte de: |
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