Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations

We calculate the tunneling magnetoresistance (TMR) of Fe ZnSe Fe ZnSe Fe (001) double magnetic tunnel junctions (DMTJs) as a function of the in-between Fe layer's thickness, and compare these results with those of Fe ZnSe Fe simple junctions. The electronic band structures are modeled by a para...

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Autores principales: Peralta-Ramos, J., Llois, A.M.
Formato: JOUR
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_10980121_v73_n21_p_PeraltaRamos
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_10980121_v73_n21_p_PeraltaRamos2023-10-03T16:05:58Z Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations Peralta-Ramos, J. Llois, A.M. We calculate the tunneling magnetoresistance (TMR) of Fe ZnSe Fe ZnSe Fe (001) double magnetic tunnel junctions (DMTJs) as a function of the in-between Fe layer's thickness, and compare these results with those of Fe ZnSe Fe simple junctions. The electronic band structures are modeled by a parametrized tight-binding Hamiltonian fitted to ab initio calculations, and the conductance is calculated in the coherent, elastic and linear response regime within the Landauer formalism. We find that the DMTJs' TMR values can be higher than those of simple junctions, and that the TMR enhancements are mainly due to a decrease in the conductance of all but one spin channel and not due to the spin-dependent resonant tunneling effect. For a wide ZnSe width range, the TMR enhancements are large and practically independent of the in-between Fe thickness, which may be relevant for applications in spintronics. © 2006 The American Physical Society. Fil:Peralta-Ramos, J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Llois, A.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v73_n21_p_PeraltaRamos
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We calculate the tunneling magnetoresistance (TMR) of Fe ZnSe Fe ZnSe Fe (001) double magnetic tunnel junctions (DMTJs) as a function of the in-between Fe layer's thickness, and compare these results with those of Fe ZnSe Fe simple junctions. The electronic band structures are modeled by a parametrized tight-binding Hamiltonian fitted to ab initio calculations, and the conductance is calculated in the coherent, elastic and linear response regime within the Landauer formalism. We find that the DMTJs' TMR values can be higher than those of simple junctions, and that the TMR enhancements are mainly due to a decrease in the conductance of all but one spin channel and not due to the spin-dependent resonant tunneling effect. For a wide ZnSe width range, the TMR enhancements are large and practically independent of the in-between Fe thickness, which may be relevant for applications in spintronics. © 2006 The American Physical Society.
format JOUR
author Peralta-Ramos, J.
Llois, A.M.
spellingShingle Peralta-Ramos, J.
Llois, A.M.
Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
author_facet Peralta-Ramos, J.
Llois, A.M.
author_sort Peralta-Ramos, J.
title Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
title_short Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
title_full Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
title_fullStr Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
title_full_unstemmed Enhanced tunneling magnetoresistance in Fe ZnSe double junctions: Ab initio calculations
title_sort enhanced tunneling magnetoresistance in fe znse double junctions: ab initio calculations
url http://hdl.handle.net/20.500.12110/paper_10980121_v73_n21_p_PeraltaRamos
work_keys_str_mv AT peraltaramosj enhancedtunnelingmagnetoresistanceinfeznsedoublejunctionsabinitiocalculations
AT lloisam enhancedtunnelingmagnetoresistanceinfeznsedoublejunctionsabinitiocalculations
_version_ 1782030577808965632

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