Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering

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We calculate the spin-relaxation time of conduction electrons in n-doped bulk GaAs. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitu...

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Autores principales: Tamborenea, P.I., Kuroda, M.A., Bottesi, F.L.
Formato: JOUR
Materias:
gallium arsenide
silicon
article
computer
crystal
density
electron
magnetic field
mathematical model
quantum theory
semiconductor
temperature dependence
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_10980121_v68_n24_p_Tamborenea
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_10980121_v68_n24_p_Tamborenea
record_format dspace
spelling todo:paper_10980121_v68_n24_p_Tamborenea2023-10-03T16:05:49Z Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering Tamborenea, P.I. Kuroda, M.A. Bottesi, F.L. gallium arsenide silicon article computer crystal density electron magnetic field mathematical model quantum theory semiconductor temperature dependence We calculate the spin-relaxation time of conduction electrons in n-doped bulk GaAs. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with dissimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin-relaxation times in gallium arsenide. © 2003 The American Physical Society. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_10980121_v68_n24_p_Tamborenea
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic gallium arsenide
silicon
article
computer
crystal
density
electron
magnetic field
mathematical model
quantum theory
semiconductor
temperature dependence
spellingShingle gallium arsenide
silicon
article
computer
crystal
density
electron
magnetic field
mathematical model
quantum theory
semiconductor
temperature dependence
Tamborenea, P.I.
Kuroda, M.A.
Bottesi, F.L.
Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering
topic_facet gallium arsenide
silicon
article
computer
crystal
density
electron
magnetic field
mathematical model
quantum theory
semiconductor
temperature dependence
description We calculate the spin-relaxation time of conduction electrons in n-doped bulk GaAs. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two scattering mechanisms result in relaxation times of equal order of magnitude, but with dissimilar dependences on doping density and temperature. Our theoretical results are compared with experimentally measured spin-relaxation times in gallium arsenide. © 2003 The American Physical Society.
format JOUR
author Tamborenea, P.I.
Kuroda, M.A.
Bottesi, F.L.
author_facet Tamborenea, P.I.
Kuroda, M.A.
Bottesi, F.L.
author_sort Tamborenea, P.I.
title Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering
title_short Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering
title_full Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering
title_fullStr Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering
title_full_unstemmed Spin relaxation in n-doped GaAs due to impurity and electron-electron Elliot-Yafet scattering
title_sort spin relaxation in n-doped gaas due to impurity and electron-electron elliot-yafet scattering
url http://hdl.handle.net/20.500.12110/paper_10980121_v68_n24_p_Tamborenea
work_keys_str_mv AT tamboreneapi spinrelaxationinndopedgaasduetoimpurityandelectronelectronelliotyafetscattering
AT kurodama spinrelaxationinndopedgaasduetoimpurityandelectronelectronelliotyafetscattering
AT bottesifl spinrelaxationinndopedgaasduetoimpurityandelectronelectronelliotyafetscattering
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