Metal-insulator transition in correlated systems: A new numerical approach
We study the Mott transition in the Hubbard model within the dynamical mean field theory approach where the density matrix renormalization group method is used to solve its self-consistent equations. The DMRG technique solves the associated impurity problem. We obtain accurate estimates of the criti...
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todo:paper_09214526_v398_n2_p407_Garcia2023-10-03T15:45:19Z Metal-insulator transition in correlated systems: A new numerical approach García, D.J. Miranda, E. Hallberg, K. Rozenberg, M.J. Density matrix renormalization group Dynamical mean field theory Mott transition Density matrix renormalization groups Dynamical mean field theory Mott transitions Self-consistent equations Degrees of freedom (mechanics) Matrix algebra Mean field theory Optical conductivity Semiconductor doping Spectrum analysis Metal insulator boundaries We study the Mott transition in the Hubbard model within the dynamical mean field theory approach where the density matrix renormalization group method is used to solve its self-consistent equations. The DMRG technique solves the associated impurity problem. We obtain accurate estimates of the critical values of the metal-insulator transitions. For the Hubbard model away from the particle-hole symmetric case we focus our study on the region of strong interactions and finite doping where two solutions coexist. In this region we demonstrate the capabilities of this method by obtaining the frequency-dependent optical conductivity spectra. With this algorithm, more complex models having a larger number of degrees of freedom can be considered and finite-size effects can be minimized. © 2007 Elsevier B.V. All rights reserved. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p407_Garcia |
institution |
Universidad de Buenos Aires |
institution_str |
I-28 |
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R-134 |
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
topic |
Density matrix renormalization group Dynamical mean field theory Mott transition Density matrix renormalization groups Dynamical mean field theory Mott transitions Self-consistent equations Degrees of freedom (mechanics) Matrix algebra Mean field theory Optical conductivity Semiconductor doping Spectrum analysis Metal insulator boundaries |
spellingShingle |
Density matrix renormalization group Dynamical mean field theory Mott transition Density matrix renormalization groups Dynamical mean field theory Mott transitions Self-consistent equations Degrees of freedom (mechanics) Matrix algebra Mean field theory Optical conductivity Semiconductor doping Spectrum analysis Metal insulator boundaries García, D.J. Miranda, E. Hallberg, K. Rozenberg, M.J. Metal-insulator transition in correlated systems: A new numerical approach |
topic_facet |
Density matrix renormalization group Dynamical mean field theory Mott transition Density matrix renormalization groups Dynamical mean field theory Mott transitions Self-consistent equations Degrees of freedom (mechanics) Matrix algebra Mean field theory Optical conductivity Semiconductor doping Spectrum analysis Metal insulator boundaries |
description |
We study the Mott transition in the Hubbard model within the dynamical mean field theory approach where the density matrix renormalization group method is used to solve its self-consistent equations. The DMRG technique solves the associated impurity problem. We obtain accurate estimates of the critical values of the metal-insulator transitions. For the Hubbard model away from the particle-hole symmetric case we focus our study on the region of strong interactions and finite doping where two solutions coexist. In this region we demonstrate the capabilities of this method by obtaining the frequency-dependent optical conductivity spectra. With this algorithm, more complex models having a larger number of degrees of freedom can be considered and finite-size effects can be minimized. © 2007 Elsevier B.V. All rights reserved. |
format |
JOUR |
author |
García, D.J. Miranda, E. Hallberg, K. Rozenberg, M.J. |
author_facet |
García, D.J. Miranda, E. Hallberg, K. Rozenberg, M.J. |
author_sort |
García, D.J. |
title |
Metal-insulator transition in correlated systems: A new numerical approach |
title_short |
Metal-insulator transition in correlated systems: A new numerical approach |
title_full |
Metal-insulator transition in correlated systems: A new numerical approach |
title_fullStr |
Metal-insulator transition in correlated systems: A new numerical approach |
title_full_unstemmed |
Metal-insulator transition in correlated systems: A new numerical approach |
title_sort |
metal-insulator transition in correlated systems: a new numerical approach |
url |
http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p407_Garcia |
work_keys_str_mv |
AT garciadj metalinsulatortransitionincorrelatedsystemsanewnumericalapproach AT mirandae metalinsulatortransitionincorrelatedsystemsanewnumericalapproach AT hallbergk metalinsulatortransitionincorrelatedsystemsanewnumericalapproach AT rozenbergmj metalinsulatortransitionincorrelatedsystemsanewnumericalapproach |
_version_ |
1807318616188649472 |