Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure

In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a s...

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Autores principales: Peralta-Ramos, J., Llois, A.M.
Formato: JOUR
Materias:
Double tunnel junctions
Fe/ZnSe
Interface structure
Tunneling magnetoresistance
Tight-binding Hamiltonian
Band structure
Bias voltage
Electronic structure
Hamiltonians
Interfaces (materials)
Magnetoresistance
Tunnel junctions
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p393_PeraltaRamos
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id todo:paper_09214526_v398_n2_p393_PeraltaRamos
record_format dspace
spelling todo:paper_09214526_v398_n2_p393_PeraltaRamos2023-10-03T15:45:19Z Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure Peralta-Ramos, J. Llois, A.M. Double tunnel junctions Fe/ZnSe Interface structure Tunneling magnetoresistance Double tunnel junctions Interface structure Tight-binding Hamiltonian Tunneling magnetoresistance Band structure Bias voltage Electronic structure Hamiltonians Interfaces (materials) Magnetoresistance Tunnel junctions In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions. © 2007 Elsevier B.V. All rights reserved. Fil:Peralta-Ramos, J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Llois, A.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p393_PeraltaRamos
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Double tunnel junctions
Fe/ZnSe
Interface structure
Tunneling magnetoresistance
Double tunnel junctions
Interface structure
Tight-binding Hamiltonian
Tunneling magnetoresistance
Band structure
Bias voltage
Electronic structure
Hamiltonians
Interfaces (materials)
Magnetoresistance
Tunnel junctions
spellingShingle Double tunnel junctions
Fe/ZnSe
Interface structure
Tunneling magnetoresistance
Double tunnel junctions
Interface structure
Tight-binding Hamiltonian
Tunneling magnetoresistance
Band structure
Bias voltage
Electronic structure
Hamiltonians
Interfaces (materials)
Magnetoresistance
Tunnel junctions
Peralta-Ramos, J.
Llois, A.M.
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
topic_facet Double tunnel junctions
Fe/ZnSe
Interface structure
Tunneling magnetoresistance
Double tunnel junctions
Interface structure
Tight-binding Hamiltonian
Tunneling magnetoresistance
Band structure
Bias voltage
Electronic structure
Hamiltonians
Interfaces (materials)
Magnetoresistance
Tunnel junctions
description In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions. © 2007 Elsevier B.V. All rights reserved.
format JOUR
author Peralta-Ramos, J.
Llois, A.M.
author_facet Peralta-Ramos, J.
Llois, A.M.
author_sort Peralta-Ramos, J.
title Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
title_short Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
title_full Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
title_fullStr Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
title_full_unstemmed Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
title_sort tunneling magnetoresistance of fe/znse (0 0 1) single- and double-barrier junctions as a function of interface structure
url http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p393_PeraltaRamos
work_keys_str_mv AT peraltaramosj tunnelingmagnetoresistanceoffeznse001singleanddoublebarrierjunctionsasafunctionofinterfacestructure
AT lloisam tunnelingmagnetoresistanceoffeznse001singleanddoublebarrierjunctionsasafunctionofinterfacestructure
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