Shock waves in binary oxides memristors

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics....

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Detalles Bibliográficos
Autores principales: Tesler, F., Tang, S., Dobrosavljević, V., Rozenberg, M., Jaffres H., Razeghi M., Drouhin H.-J., Wegrowe J.-E., The Society of Photo-Optical Instrumentation Engineers (SPIE)
Formato: CONF
Materias:
Memristors
Resistive Switching
Shock Waves
Bins
Magnetoelectronics
Transition metal compounds
Transition metals
Minimum feature sizes
Model simulation
Non-linear dynamics
Resistive switching
Resistive switching behaviors
Silicon-based technology
Transition-metal oxides
Trial and error
Shock waves
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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