Shock waves in binary oxides memristors
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics....
Guardado en:
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | CONF |
| Materias: | |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler |
| Aporte de: |
| id |
todo:paper_0277786X_v10357_n_p_Tesler |
|---|---|
| record_format |
dspace |
| spelling |
todo:paper_0277786X_v10357_n_p_Tesler2023-10-03T15:16:14Z Shock waves in binary oxides memristors Tesler, F. Tang, S. Dobrosavljević, V. Rozenberg, M. Jaffres H. Razeghi M. Drouhin H.-J. Wegrowe J.-E. The Society of Photo-Optical Instrumentation Engineers (SPIE) Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations. © 2017 SPIE. CONF info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves |
| spellingShingle |
Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves Tesler, F. Tang, S. Dobrosavljević, V. Rozenberg, M. Jaffres H. Razeghi M. Drouhin H.-J. Wegrowe J.-E. The Society of Photo-Optical Instrumentation Engineers (SPIE) Shock waves in binary oxides memristors |
| topic_facet |
Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves |
| description |
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations. © 2017 SPIE. |
| format |
CONF |
| author |
Tesler, F. Tang, S. Dobrosavljević, V. Rozenberg, M. Jaffres H. Razeghi M. Drouhin H.-J. Wegrowe J.-E. The Society of Photo-Optical Instrumentation Engineers (SPIE) |
| author_facet |
Tesler, F. Tang, S. Dobrosavljević, V. Rozenberg, M. Jaffres H. Razeghi M. Drouhin H.-J. Wegrowe J.-E. The Society of Photo-Optical Instrumentation Engineers (SPIE) |
| author_sort |
Tesler, F. |
| title |
Shock waves in binary oxides memristors |
| title_short |
Shock waves in binary oxides memristors |
| title_full |
Shock waves in binary oxides memristors |
| title_fullStr |
Shock waves in binary oxides memristors |
| title_full_unstemmed |
Shock waves in binary oxides memristors |
| title_sort |
shock waves in binary oxides memristors |
| url |
http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler |
| work_keys_str_mv |
AT teslerf shockwavesinbinaryoxidesmemristors AT tangs shockwavesinbinaryoxidesmemristors AT dobrosavljevicv shockwavesinbinaryoxidesmemristors AT rozenbergm shockwavesinbinaryoxidesmemristors AT jaffresh shockwavesinbinaryoxidesmemristors AT razeghim shockwavesinbinaryoxidesmemristors AT drouhinhj shockwavesinbinaryoxidesmemristors AT wegroweje shockwavesinbinaryoxidesmemristors AT thesocietyofphotoopticalinstrumentationengineersspie shockwavesinbinaryoxidesmemristors |
| _version_ |
1782026741217230848 |