A model for non-volatile electronic memory devices with strongly correlated materials
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nano...
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| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00406090_v486_n1-2_p24_Rozenberg |
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todo:paper_00406090_v486_n1-2_p24_Rozenberg2023-10-03T14:51:07Z A model for non-volatile electronic memory devices with strongly correlated materials Rozenberg, M.J. Inoue, I.H. Sánchez, M.J. Non-volatile memory Resistance switching Charge transfer Correlation methods Current voltage characteristics Doping (additives) Electric currents Electric potential Electric resistance Fermi level Hysteresis Mathematical models MIM devices Random access storage Memory effects Non-volatile memories Resistance random access memories (RRAM) Resistance switching Data storage equipment The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00406090_v486_n1-2_p24_Rozenberg |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Non-volatile memory Resistance switching Charge transfer Correlation methods Current voltage characteristics Doping (additives) Electric currents Electric potential Electric resistance Fermi level Hysteresis Mathematical models MIM devices Random access storage Memory effects Non-volatile memories Resistance random access memories (RRAM) Resistance switching Data storage equipment |
| spellingShingle |
Non-volatile memory Resistance switching Charge transfer Correlation methods Current voltage characteristics Doping (additives) Electric currents Electric potential Electric resistance Fermi level Hysteresis Mathematical models MIM devices Random access storage Memory effects Non-volatile memories Resistance random access memories (RRAM) Resistance switching Data storage equipment Rozenberg, M.J. Inoue, I.H. Sánchez, M.J. A model for non-volatile electronic memory devices with strongly correlated materials |
| topic_facet |
Non-volatile memory Resistance switching Charge transfer Correlation methods Current voltage characteristics Doping (additives) Electric currents Electric potential Electric resistance Fermi level Hysteresis Mathematical models MIM devices Random access storage Memory effects Non-volatile memories Resistance random access memories (RRAM) Resistance switching Data storage equipment |
| description |
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases. |
| format |
JOUR |
| author |
Rozenberg, M.J. Inoue, I.H. Sánchez, M.J. |
| author_facet |
Rozenberg, M.J. Inoue, I.H. Sánchez, M.J. |
| author_sort |
Rozenberg, M.J. |
| title |
A model for non-volatile electronic memory devices with strongly correlated materials |
| title_short |
A model for non-volatile electronic memory devices with strongly correlated materials |
| title_full |
A model for non-volatile electronic memory devices with strongly correlated materials |
| title_fullStr |
A model for non-volatile electronic memory devices with strongly correlated materials |
| title_full_unstemmed |
A model for non-volatile electronic memory devices with strongly correlated materials |
| title_sort |
model for non-volatile electronic memory devices with strongly correlated materials |
| url |
http://hdl.handle.net/20.500.12110/paper_00406090_v486_n1-2_p24_Rozenberg |
| work_keys_str_mv |
AT rozenbergmj amodelfornonvolatileelectronicmemorydeviceswithstronglycorrelatedmaterials AT inoueih amodelfornonvolatileelectronicmemorydeviceswithstronglycorrelatedmaterials AT sanchezmj amodelfornonvolatileelectronicmemorydeviceswithstronglycorrelatedmaterials AT rozenbergmj modelfornonvolatileelectronicmemorydeviceswithstronglycorrelatedmaterials AT inoueih modelfornonvolatileelectronicmemorydeviceswithstronglycorrelatedmaterials AT sanchezmj modelfornonvolatileelectronicmemorydeviceswithstronglycorrelatedmaterials |
| _version_ |
1782030701716045824 |