Nonvolatile memory with multilevel switching: A basic model
An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carr...
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| Autores principales: | , , |
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| Formato: | JOUR |
| Materias: | |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00319007_v92_n17_p178302_Rozenberg |
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| Sumario: | An initial model for resistance random access memory (RRAM) with the assumption that the semiconducting part has a nonpercolating domain structure was analyzed. The model was solved using numerical simulations and the basic carrier transfer mechanism was discussed. It was shown that the largest carrier transfers occur between top and bottom domains, and the middle one, since the interdomain tunneling amplitudes are higher. The results show that the model captures multilevel switchability of the resistance, its memory retention and hysteretic behavior in the current-voltage curve. |
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