Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

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We explore different resistance states of La 0.325Pr 0.300 Ca 0.375 MnO 3- Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repe...

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Detalles Bibliográficos
Autores principales: Ghenzi, N., Snchez, M.J., Rozenberg, M.J., Stoliar, P., Marlasca, F.G., Rubi, D., Levy, P.
Formato: JOUR
Materias:
High resistance
High-resistance state
Low-resistance state
Model simulation
Multipulses
Nonvolatile memory devices
Oxide interfaces
Resistance state
Resistance values
Resistive switching
Room temperature
Time constants
Computer simulation
Interface states
Manganese oxide
Experiments
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00218979_v111_n8_p_Ghenzi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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