A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition

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A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic fo...

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Detalles Bibliográficos
Autores principales: Marchi, M.C., Bilmes, S.A., Ribeiro, C.T.M., Ochoa, E.A., Kleinke, M., Alvarez, F.
Formato: JOUR
Materias:
Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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