A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition

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A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic fo...

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Autores principales:	Marchi, M.C., Bilmes, S.A., Ribeiro, C.T.M., Ochoa, E.A., Kleinke, M., Alvarez, F.
Formato:	JOUR
Materias:	Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00218979_v108_n6_p_Marchi
record_format	dspace
spelling	todo:paper_00218979_v108_n6_p_Marchi2023-10-03T14:22:10Z A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition Marchi, M.C. Bilmes, S.A. Ribeiro, C.T.M. Ochoa, E.A. Kleinke, M. Alvarez, F. Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics. Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation
spellingShingle	Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation Marchi, M.C. Bilmes, S.A. Ribeiro, C.T.M. Ochoa, E.A. Kleinke, M. Alvarez, F. A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
topic_facet	Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation
description	A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.
format	JOUR
author	Marchi, M.C. Bilmes, S.A. Ribeiro, C.T.M. Ochoa, E.A. Kleinke, M. Alvarez, F.
author_facet	Marchi, M.C. Bilmes, S.A. Ribeiro, C.T.M. Ochoa, E.A. Kleinke, M. Alvarez, F.
author_sort	Marchi, M.C.
title	A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_short	A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_full	A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_fullStr	A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_full_unstemmed	A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_sort	comprehensive study of the influence of the stoichiometry on the physical properties of tio x films prepared by ion beam deposition
url	http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
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A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition

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