Cita APA (7a ed.)

Carbonetto, S., García Inza, M., Lipovetzky, J., Redin, E., Sambuco Salomone, L., & Faigon, A. Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry.

Cita Chicago Style (17a ed.)

Carbonetto, S.H, M.A García Inza, J. Lipovetzky, E.G Redin, L. Sambuco Salomone, y A. Faigon. Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry.

Cita MLA (8a ed.)

Carbonetto, S.H, et al. Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry.