Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)

Mechanical stress due to a misfit between a thin film and its substrate induces strains which can strongly modify the unstrained thin film properties. One good and interesting example to study strain effects is given by ultrathin films of Fe epitaxially grown on MnAs(110)/GaAs(001). The MnAs(110) fi...

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Autores principales: Helman, C., Llois, A.M.
Formato: JOUR
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Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00189464_v49_n8_p4675_Helman
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spelling todo:paper_00189464_v49_n8_p4675_Helman2023-10-03T14:16:22Z Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001) Helman, C. Llois, A.M. Magnetic anisotrophy Magnetic devices Magnetoelasticity Nanomaterials Ab initio calculations Magnetic anisotrophy Magneto-elasticity Mechanical stress Spin-orbit couplings Strain-induced anisotropy Thin-film properties Ultrathin Fe films Calculations Gallium arsenide Magnetic devices Nanostructured materials Semiconducting gallium Stresses Ultrathin films Strain Mechanical stress due to a misfit between a thin film and its substrate induces strains which can strongly modify the unstrained thin film properties. One good and interesting example to study strain effects is given by ultrathin films of Fe epitaxially grown on MnAs(110)/GaAs(001). The MnAs(110) films show, at room temperature, coexistence of two structural phases, which organize themselves forming a striped pattern. The Fe epilayer senses the strain effects due to lattice mismatch and to the border constraints given by the striped substrate. In this work, we are concerned with the consequences that this strain has on the magnetic anisotropy of the Fe thin film and try to explain recent experimental results. These experiments indicate an easy axis rotation of the film Fe atoms sitting on one of the striped phases. In order to have an approach to the understanding of the observed phenomenon, we make use of ab initio calculations and of the magnetoelastic model. We find that both the magnetoelastic model and the ab initio calculated spin orbit coupling point towards the strain effects as the most important contribution to the observed easy axis rotation. © 1965-2012 IEEE. Fil:Llois, A.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00189464_v49_n8_p4675_Helman
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Magnetic anisotrophy
Magnetic devices
Magnetoelasticity
Nanomaterials
Ab initio calculations
Magnetic anisotrophy
Magneto-elasticity
Mechanical stress
Spin-orbit couplings
Strain-induced anisotropy
Thin-film properties
Ultrathin Fe films
Calculations
Gallium arsenide
Magnetic devices
Nanostructured materials
Semiconducting gallium
Stresses
Ultrathin films
Strain
spellingShingle Magnetic anisotrophy
Magnetic devices
Magnetoelasticity
Nanomaterials
Ab initio calculations
Magnetic anisotrophy
Magneto-elasticity
Mechanical stress
Spin-orbit couplings
Strain-induced anisotropy
Thin-film properties
Ultrathin Fe films
Calculations
Gallium arsenide
Magnetic devices
Nanostructured materials
Semiconducting gallium
Stresses
Ultrathin films
Strain
Helman, C.
Llois, A.M.
Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)
topic_facet Magnetic anisotrophy
Magnetic devices
Magnetoelasticity
Nanomaterials
Ab initio calculations
Magnetic anisotrophy
Magneto-elasticity
Mechanical stress
Spin-orbit couplings
Strain-induced anisotropy
Thin-film properties
Ultrathin Fe films
Calculations
Gallium arsenide
Magnetic devices
Nanostructured materials
Semiconducting gallium
Stresses
Ultrathin films
Strain
description Mechanical stress due to a misfit between a thin film and its substrate induces strains which can strongly modify the unstrained thin film properties. One good and interesting example to study strain effects is given by ultrathin films of Fe epitaxially grown on MnAs(110)/GaAs(001). The MnAs(110) films show, at room temperature, coexistence of two structural phases, which organize themselves forming a striped pattern. The Fe epilayer senses the strain effects due to lattice mismatch and to the border constraints given by the striped substrate. In this work, we are concerned with the consequences that this strain has on the magnetic anisotropy of the Fe thin film and try to explain recent experimental results. These experiments indicate an easy axis rotation of the film Fe atoms sitting on one of the striped phases. In order to have an approach to the understanding of the observed phenomenon, we make use of ab initio calculations and of the magnetoelastic model. We find that both the magnetoelastic model and the ab initio calculated spin orbit coupling point towards the strain effects as the most important contribution to the observed easy axis rotation. © 1965-2012 IEEE.
format JOUR
author Helman, C.
Llois, A.M.
author_facet Helman, C.
Llois, A.M.
author_sort Helman, C.
title Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)
title_short Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)
title_full Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)
title_fullStr Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)
title_full_unstemmed Strain induced anisotropy change in ultrathin Fe films grown on MnAs(110)/GaAs(001)
title_sort strain induced anisotropy change in ultrathin fe films grown on mnas(110)/gaas(001)
url http://hdl.handle.net/20.500.12110/paper_00189464_v49_n8_p4675_Helman
work_keys_str_mv AT helmanc straininducedanisotropychangeinultrathinfefilmsgrownonmnas110gaas001
AT lloisam straininducedanisotropychangeinultrathinfefilmsgrownonmnas110gaas001
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