Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures

We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage control...

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Autores principales: Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D.
Formato: JOUR
Materias:
Heterojunctions
Manganese oxide
Switching systems
Current voltage curve
Electrical characterization
Electrical response
Fabrication procedure
Impedance spectroscopy
Intermediate resistance
Low-resistance state
Resistive switching
Memristors
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling todo:paper_00036951_v110_n5_p_RomanAcevedo2023-10-03T13:56:34Z Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures Román Acevedo, W. Acha, C. Sánchez, M.J. Levy, P. Rubi, D. Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active resistive switching oxides adds functionalities in relation to the single-oxide devices. We understand that these multilevel devices are interesting and promising, as their fabrication procedure is rather simple and they are fully compatible with the standard Si-based electronics. © 2017 Author(s). Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Heterojunctions
Manganese oxide
Switching systems
Current voltage curve
Electrical characterization
Electrical response
Fabrication procedure
Impedance spectroscopy
Intermediate resistance
Low-resistance state
Resistive switching
Memristors
spellingShingle Heterojunctions
Manganese oxide
Switching systems
Current voltage curve
Electrical characterization
Electrical response
Fabrication procedure
Impedance spectroscopy
Intermediate resistance
Low-resistance state
Resistive switching
Memristors
Román Acevedo, W.
Acha, C.
Sánchez, M.J.
Levy, P.
Rubi, D.
Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
topic_facet Heterojunctions
Manganese oxide
Switching systems
Current voltage curve
Electrical characterization
Electrical response
Fabrication procedure
Impedance spectroscopy
Intermediate resistance
Low-resistance state
Resistive switching
Memristors
description We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active resistive switching oxides adds functionalities in relation to the single-oxide devices. We understand that these multilevel devices are interesting and promising, as their fabrication procedure is rather simple and they are fully compatible with the standard Si-based electronics. © 2017 Author(s).
format JOUR
author Román Acevedo, W.
Acha, C.
Sánchez, M.J.
Levy, P.
Rubi, D.
author_facet Román Acevedo, W.
Acha, C.
Sánchez, M.J.
Levy, P.
Rubi, D.
author_sort Román Acevedo, W.
title Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_short Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_full Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_fullStr Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_full_unstemmed Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_sort origin of multistate resistive switching in ti/manganite/siox/si heterostructures
url http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
work_keys_str_mv AT romanacevedow originofmultistateresistiveswitchingintimanganitesioxsiheterostructures
AT achac originofmultistateresistiveswitchingintimanganitesioxsiheterostructures
AT sanchezmj originofmultistateresistiveswitchingintimanganitesioxsiheterostructures
AT levyp originofmultistateresistiveswitchingintimanganitesioxsiheterostructures
AT rubid originofmultistateresistiveswitchingintimanganitesioxsiheterostructures
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