Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabri...
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| Autores principales: | Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E., Stoliar, P., Tsur, Y., Casanova, F. |
|---|---|
| Formato: | JOUR |
| Materias: | |
| Acceso en línea: | http://hdl.handle.net/20.500.12110/paper_00036951_v105_n14_p_Goren |
| Aporte de: |
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