Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabri...

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Detalles Bibliográficos
Autores principales:	Goren, E., Ungureanu, M., Zazpe, R., Rozenberg, M., Hueso, L.E., Stoliar, P., Tsur, Y., Casanova, F.
Formato:	JOUR
Materias:	Memory applications Nanoparticle layers Resistive switching TiO
Acceso en línea:	http://hdl.handle.net/20.500.12110/paper_00036951_v105_n14_p_Goren
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	todo:paper_00036951_v105_n14_p_Goren
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spelling	todo:paper_00036951_v105_n14_p_Goren2023-10-03T13:56:33Z Resistive switching phenomena in TiOx nanoparticle layers for memory applications Goren, E. Ungureanu, M. Zazpe, R. Rozenberg, M. Hueso, L.E. Stoliar, P. Tsur, Y. Casanova, F. Memory applications Nanoparticle layers Resistive switching TiO Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties. © 2014 AIP Publishing LLC. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. JOUR info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by/2.5/ar http://hdl.handle.net/20.500.12110/paper_00036951_v105_n14_p_Goren
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Memory applications Nanoparticle layers Resistive switching TiO
spellingShingle	Memory applications Nanoparticle layers Resistive switching TiO Goren, E. Ungureanu, M. Zazpe, R. Rozenberg, M. Hueso, L.E. Stoliar, P. Tsur, Y. Casanova, F. Resistive switching phenomena in TiOx nanoparticle layers for memory applications
topic_facet	Memory applications Nanoparticle layers Resistive switching TiO
description	Electrical characteristics of a Co/ TiOx/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiOx nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties. © 2014 AIP Publishing LLC.
format	JOUR
author	Goren, E. Ungureanu, M. Zazpe, R. Rozenberg, M. Hueso, L.E. Stoliar, P. Tsur, Y. Casanova, F.
author_facet	Goren, E. Ungureanu, M. Zazpe, R. Rozenberg, M. Hueso, L.E. Stoliar, P. Tsur, Y. Casanova, F.
author_sort	Goren, E.
title	Resistive switching phenomena in TiOx nanoparticle layers for memory applications
title_short	Resistive switching phenomena in TiOx nanoparticle layers for memory applications
title_full	Resistive switching phenomena in TiOx nanoparticle layers for memory applications
title_fullStr	Resistive switching phenomena in TiOx nanoparticle layers for memory applications
title_full_unstemmed	Resistive switching phenomena in TiOx nanoparticle layers for memory applications
title_sort	resistive switching phenomena in tiox nanoparticle layers for memory applications
url	http://hdl.handle.net/20.500.12110/paper_00036951_v105_n14_p_Goren
work_keys_str_mv	AT gorene resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT ungureanum resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT zazper resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT rozenbergm resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT huesole resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT stoliarp resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT tsury resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications AT casanovaf resistiveswitchingphenomenaintioxnanoparticlelayersformemoryapplications
_version_	1782024577010892800

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

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