Hysteresis switching loops in Ag-manganite memristive interfaces

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Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops...

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Detalles Bibliográficos
Autores principales: Ghenzi, N., Sánchez, M.J., Gomez-Marlasca, F., Levy, P., Rozenberg, M.J.
Formato: Artículo publishedVersion
Lenguaje:Inglés
Publicado: 2010
Materias:
Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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